Bulk InAsSb with 0.1 eV bandgap on GaAs

Abstract

We report on the growth of near-minimum bandgap (0.1 eV) bulk InAs0.54Sb0.46 on GaAs with pronounced photoluminescence. Combining strain-mediating techniques effectively manages the ∼10% lattice mismatch. An interfacial misfit (IMF) dislocation array allows a GaAs substrate and a GaSb buffer layer to act as a direct substitute for a conventional GaSb substrate. We further increase the lattice constant with a linearly graded metamorphic buffer layer of AlGaInSb, upon which we grow an AlInSb virtual substrate with the targeted lattice constant of the active InAsSb region. We observe that the graded buffer not only manages the mismatch between GaSb and InAsSb but also reduces the density of residual threading dislocations from the GaSb/GaAs IMF by a factor of ∼10×. Material characterization demonstrates the viability of using the coupled approach of metamorphic, graded buffers and IMF arrays to manage the large lattice mismatch between the substrate and the mixed group V ternary InAsSb.

Monolithically Integrated InAsSb-Based nBnBn Heterostructure on GaAs for Infrared Detection

“…Recently, a novel growth technique called interfacial misfit array (IMF) growth mode was developed that allows buffer-free growth of high quality GaSb layers onto lattice-mismatched GaAs substrates [13,14]. Growth of InAsSb nBn photodetector layers was also demonstrated on GaAs substrates using a high quality GaSb buffer layer prepared by the IMF technique [15]. The nBn detectors grown on GaAs substrate were reported to achieve comparable performance to the devices grown on more expensive GaSb substrates [16,17].…”

Quantum transport in InSb quantum well devices: progress and perspective

“…Several reports have detailed the MBE growth and characterization of InAsSb materials in bulk and two-dimensional (2D) structures [81,82]. Optical measurements on bulk material have revealed an effective g-factor exceeding 100 when the Sb composition approaches 63% [83].…”

Growth of bulk 0.1 eV InAsSb on GaAs substrate with InAs-based intermediate buffer layer

“…To further enhance the material quality, an additional buffer could be employed for the InAsSb layer with a low TDD value, including InAl(Ga)Sb graded buffer and InAsSb step graded buffer. [12][13][14] Photoluminescence (PL) measurements in the mid-and long-wavelength infrared region were performed by a Bruker Vertex 80v Fourier transformation infrared spectroscopy (FTIR) machine. A carrier confinement layer was not applied, which can increase the PL intensity.…”