Handbook of 3D Integration 2014
DOI: 10.1002/9783527670109.ch23
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Bump Interconnect for 2.5D and 3D Integration

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“…Typically, the same metal is used on each wafer, and a homogenous metal seal is formed by self-diffusion (e.g., Al-Al, Cu-Cu, and Au-Au). Like the other proposed sealing methods, the metal-to-metal approach has also been researched for IC interconnects [92,154] and WLVP on proxy surrogates [155], MEMS accelerometers [156], and infrared imagers [157]. Embodiments that simultaneously create IC interconnects and hermetic seals have also been demonstratedrff on surrogate wafers [158,159,160,161,162].…”
Section: Bonding Approachesmentioning
confidence: 99%
“…Typically, the same metal is used on each wafer, and a homogenous metal seal is formed by self-diffusion (e.g., Al-Al, Cu-Cu, and Au-Au). Like the other proposed sealing methods, the metal-to-metal approach has also been researched for IC interconnects [92,154] and WLVP on proxy surrogates [155], MEMS accelerometers [156], and infrared imagers [157]. Embodiments that simultaneously create IC interconnects and hermetic seals have also been demonstratedrff on surrogate wafers [158,159,160,161,162].…”
Section: Bonding Approachesmentioning
confidence: 99%