Burgers vector analysis by three-dimensional laser-scattering tomography

Albrecht, M.; Naumann, M.

doi:10.1016/j.jcrysgro.2008.06.071

Cited by 2 publications

(3 citation statements)

References 12 publications

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“…In general, spatial distributions of dislocations in AlN crystals with densities below 10 6 cm −2 can be studied by defect-selective etching (DSE), 5,14,15 laser scattering tomography (LST), 16 and X-ray diffraction imaging techniques such as X-ray topography (XRT). 17−19 DSE only provides the distribution of intersection points in the form of pits caused by chemical etching along the dislocation lines.…”

Section: ■ Introductionmentioning

confidence: 99%

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Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction Imaging

Straubinger

Hartmann

Kabukcuoglu

et al. 2023

Crystal Growth & Design

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The dislocation evolution in a cross-section a-plane cut through a sublimation-grown aluminum nitride (AlN) crystal grown with low-temperature gradients and subsequent low thermal stress is investigated with different X-ray diffraction imaging methods. Exploiting the so-called weak-beam contrast using monochromatic X-rays in combination with suitable three-dimensional (3D) interpretation and reconstruction allows the identification of individual dislocations as well as tracing their progression in the crystal volume, even in the considerably strained interface region. It is particularly striking that the laterally grown crystal volume is dislocation-free. The dislocation densities in the seed and the bulk volume are similar (1 × 103 cm–2), but while the dislocations in the seed are randomly arranged, the dislocations in the bulk volume show a uniform line shape, indicating a common mechanism of dislocation movement. Since the dislocation slings in the bulk do not lie in slip planes, it can be concluded that the lateral movement does not result from dislocation glide, but from impurity-driven climb of dislocations during growth. The absence of slip can be explained by the low-temperature gradients and the subsequent low thermal stress below the critical resolved shear stress (CRSS).

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Section: ■ Introductionmentioning

confidence: 99%

“…In general, spatial distributions of dislocations in AlN crystals with densities below 10 6 cm –2 can be studied by defect-selective etching (DSE), ,, laser scattering tomography (LST), and X-ray diffraction imaging techniques such as X-ray topography (XRT). − …”

Section: Introductionmentioning

confidence: 99%

Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction Imaging

Straubinger

Hartmann

Kabukcuoglu

et al. 2023

Crystal Growth & Design

View full text Add to dashboard Cite

show abstract

“…Several methods can be used in the investigation of crystal defects, such as transmission electron microscopy (TEM) [1,2], X-ray topography (XRT) [3][4][5], optical and cathode luminescence microscopy, photoluminescence spectroscopy [6,7], laser-scattering tomography [8], selective etching [9], etc. XRT is generally used since it is efficient and nondestructive to the specimen.…”

Section: Introductionmentioning

confidence: 99%

An Approach to Calculate the Directions of Crystal Defects in Synchrotron Radiation Topography

Jia

Yuan³

2013

AMR

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An approach was proposed to calculate the directions of crystal defects in the research of synchrotron radiation topography (SRT). The calculating method was deduced based on the theory of homogeneous coordinates. When spherical coordinates of a crystal defect had been calculated in a radiograph, the directions of the defect on any other radiograph, taken after the specimen had been turned around any axis in the SRT experiments, could be calculated. The directions of crystal defects can be determined by the methods previously been used only if the images of the same defects are similar in the topographs, but it is often not the case in the SRT experiments. With the method proposed in this paper, it is convenient to analyze the defects in different radiographs on which the images of the same defects are dissimilar. An example was taken to show the use of the method.

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Burgers vector analysis by three-dimensional laser-scattering tomography

Cited by 2 publications

References 12 publications

Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction Imaging

Dislocation Climb in AlN Crystals Grown at Low-Temperature Gradients Revealed by 3D X-ray Diffraction Imaging

An Approach to Calculate the Directions of Crystal Defects in Synchrotron Radiation Topography

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