Buried hydrophobic silicon bonding studied by high-energy x-ray reflectivity

Buttard, D.; Rieutord, F.; Eymery, J.; Fournel, Frank; Bataillou, B.

doi:10.1088/0022-3727/36/10a/342

Cited by 2 publications

(3 citation statements)

References 10 publications

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“…Previous high energy XRR studies of bonded Si wafers that were not plasma activated show that densification of the interfacial region does not occur until 600-1000˚C [9]. It is evident that the oxygen plasma activation step allows the densification of this region at a much lower temperature (150-300˚C), indicating that the increased diffusion of interfacial by-products is primarily responsible for the marked increase in bond strength at low temperature [15].…”

Section: Discussionmentioning

confidence: 87%

“…These characteristics are expected to be important in the structure of bonded interfaces, and consequently this technique is complementary to infrared spectroscopy and electron microscopy studies, as it is the only technique that enables interfacial roughness and compositional grading to be distinguished. Previous studies have used high energy synchrotron radiation to penetrate through the semiconductor wafer thickness and probe the interface characteristics of bonded hydrophobic and hydrophilic Si wafers [9,10]. In contrast, for the present study, the reflectivity measurements were carried out with a laboratory x-ray tube source, which is generally more accessible.…”

Section: Introductionmentioning

confidence: 99%

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Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Hayashi

Sandhu

Wójtowicz

et al. 2005

J. Phys. D: Appl. Phys.

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Specular and diffuse x-ray reflectivity measurements were employed for wafer bonding studies of surface and interfacial reactions in ∼800 Å thick SiN films deposited on III–V substrates. CuKα1 radiation was employed for these measurements. The as-deposited films show very low surface roughness and uniform, high density SiN. Reflectivity measurements show that an oxygen plasma treatment converts the nitride surface to a somewhat porous SiOx layer (67 Å thick, at 80% of SiO2 density), with confirmation of the oxide formation from x-ray photoelectron spectroscopy. Reactions at the bonded interface of two oxygen plasma treated SiN layers were examined using a bonded structure from which one of the III–V wafers is removed. Reflectivity measurements of bonded structures annealed at 150°C and 300°C show an increase in the SiOx layer density and thickness and even a density gradient across this interface. The increase in density is correlated with an increase in bond strength, where after the 300°C anneal, a high interfacial bond strength, exceeding the bulk strength, was achieved.

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Section: Discussionmentioning

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Hayashi

Sandhu

Wójtowicz

et al. 2005

J. Phys. D: Appl. Phys.

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“…At room temperature, this has been observed for the growth of native oxide and of anodic oxide. 20 Ito et al 21 proposed that the decrease in the strain upon annealing in vacuum is related to the desorption in chemisorbed hydrogen from Si atoms in the pores and the increase in strain is related to the formation of Si-H bonding during anodization. Our proposed picture for the microscopic origin of the surface potential supports the above experimental evidences.…”

Section: A Effect Of Coordination and Charging On Strain And Structumentioning

confidence: 99%

Strain-induced instability of spherical nanodiamond hydrocarbons: Effect of surfaceCHnand charging

2009

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The structural stability and vibrational properties of different sizes and charge states of the hydrogen saturated spherical and cagelike C nanoparticles were investigated by means of ab initio density-functional theory. The cagelike nanoparticles remain stable and stiff under structural relaxation, whereas specific sizes and charge states of spherical C nanoparticles deform dramatically and dissociate under the relaxation. In order to see the possibility of observation this effect in other semiconductor nanoparticles, two smallest sizes of spherical Si nanoparticles were also examined and similar instabilities were obtained. We explain the induced large amount of positive strain of unstable spherical C and Si nanoparticles by the presence of CH 3 and SiH 3 terminations on the surface. These terminations result in a very packed arrangement of polar C-H bonds and consequently a large value of Coulombic potential on the surface and corresponding strain in the volume of the clusters, respectively. We demonstrate that the variation in formation and electronic properties with size correlate with the variation in CH/ CH 2 +CH 3 ratio of the surface with size in agreement with the recently reported empirical correlation suggested by x-ray absorption spectroscopy measurements. Likewise, we discuss the reported empirical correlation between H coverage and strain in porous Si and some other corresponding experimental evidences in porous Si. The calculation of the vibrational properties supports the reported structural instabilities.

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Buried hydrophobic silicon bonding studied by high-energy x-ray reflectivity

Cited by 2 publications

References 10 publications

Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity

Strain-induced instability of spherical nanodiamond hydrocarbons: Effect of surfaceCHnand charging

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