c -axis oriented ferroelectric thin films of Si-substituted PbTiO3 on Si(100) by pulsed laser deposition: Boost for nonvolatile memory application

Abstract

It has been demonstrated that Si substitution in a PbTiO3 target helps to avoid the formation of a pyrochlore phase, which otherwise occurs during fabrication of the films directly on Si(100) by the pulsed laser deposition technique. The films are perfectly c-axis oriented. Moreover, the ferroelectric properties of PbTiO3 are not affected by Si substitution. As silicon helps the realization of the films at low substrate temperature, the Pb/Ti ratio is maintained close to 1 and the loss factor tan δ in the range of 0.02–0.05. Thus, the integration of nonvolatile ferroelectric random access memory on semiconductors is shown to be possible in a reliable, cost effective, and simple manner.

The Structure and Defect Formation Energy in Tetragonal PbTiO3:AbInitio Calculation

“…1. V Pb 2− + V O 2+ is also the main defect reported on experiments [18,21]. In the cases of SrTiO 3 and BaTiO 3 , the dominant defect species is V O or V Sr (Ba) 2− + V O 2+ , depending on the thermodynamic condition [11,12].…”

Local Hysteresis Behavior of Ferroelectric Thin Films of Si added PbTiO3

“…The decrease in amplitude of the remanent polarization state after repeated switching, known as fatigue, can cause bit failure in NV-FRAM. Thin films growth of this special material on Si substrate using Pulsed Laser Deposition technique (PLD) has been reported earlier [9]. It is essential to understand the role of the thickness, grain size, grain boundary composition, domain orientation etc.…”

Deposition of PbTiO3 films on Pt/Si substrates using pulsed laser deposition

“…Wu prepared lead titanate thin films on Si substrates employing CeO 2 and Y 2 O 3 buffer layers 20,21 while Purandare prepared oriented Si substituted lead titanate thin films by pulsed laser deposition on Si(1 0 0) substrates. 22 However, the use of these substrates limits any property evaluation in the context of device integration on silicon.…”