C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

Shigematsu, H.; Inoue, Yusuke; Akasegawa, Akihiko; Yamada, Mitsuhiko; Masuda, S.; Kamada, Y.; Yamada, Atsushi; Kanamura, Masahito; Ohki, Takao; Makiyama, Kozo; Okamoto, Naoya; Imanishi, Kenji; Kikkawa, T.; Joshin, K.; Hara, Naoki

doi:10.1109/mwsym.2009.5165934

Cited by 42 publications

(16 citation statements)

References 9 publications

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“…Finally, the pulse width is fixed to 64 µsec while it can be varied from 1 to 100 µsec in the present work. Reference [14] shows a P OU T similar to that in this study. The PAE shown is superior to ours; however, the result is measured at a single tuned frequency.…”

Section: Switching Time Analysis Of Bias Switching Driversupporting

confidence: 83%

“…Because of the slow transient response caused by gate switching, PRF is limited to 0.5 kHz. Among the pulse mode SSPA in the X-band, both [7] and [14] use drain switching. The work in [7] achieves a high P OU T > 250 W, however, the result is measured using a relatively low PRF of 1.1 kHz.…”

Section: Switching Time Analysis Of Bias Switching Drivermentioning

confidence: 99%

“…In the past, the power available from individual solid-state devices has been limited when compared with vacuum tube devices. Recently, significant progress has been made on GaN high-electron-mobility transistors (HEMT) for highpower solid-state power amplifiers (SSPAs) [7][8][9][10][11][12][13][14][15][16][17]. Using pulse compression techniques, radar systems using SSPAs show similar performance to that of vacuum tubes [7].…”

Section: Introductionmentioning

confidence: 99%

“…The GaN HEMT amplifier in [12] produces a 400 W output power in Class-AB pulse mode for a 3.5 GHz WiMAX base station. The work in [14] presents an X-band 100 W pulse mode GaN amplifier for radar systems. The work in [17] presents a GaN HEMT generating 870 W in the S-band (2.9-3.3 GHz).…”

Section: Introductionmentioning

confidence: 99%

“…Sharp pulse edges and narrow pulse width are required to increase radar range resolution. Previous studies have examined the effect of these parameters in pulse mode radar systems [12][13][14][15]. The work in [12] used the Class-AB pulse mode, which exhibited slow switching time via time sequential operation.…”

Section: Introductionmentioning

confidence: 99%

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An X-Band 100 W Gan Hemt Power Amplifier Using a Hybrid Switching Method for Fast Pulse Switching

Kim¹,

Cho²,

Kwon³

et al. 2017

PIER B

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Abstract-This paper presents a new hybrid switching technique for enhanced pulsemode solid-state power amplifiers (SSPAs). In the proposed technique, pulse timing for bias stabilization is effectively decoupled from pulse amplification. The decoupling allows fast pulse switching by reducing the pulse width and increasing the pulse repetition frequency (PRF). The new switching method is applied to an X-band SSPA using GaN HEMT. The advantage of the proposed method is demonstrated by its excellent pulse characteristic. The proposed technique achieves a fast PRF of 100 kHz and a narrow pulse width of 1 µsec. The measured rise/fall time(RFT) is 12.5/11.1 nsec, which is more than four times less than that of previous works. In addition, an excellent pulse droop of 0.43 dB is achieved with an output power of 51.3 dBm at 9.9 GHz. The fabricated SSPA shows a maximum output power of 135 W, a small signal gain of 47 dB, and power added efficiency (PAE) of 28.2% at 9.9 GHz. These results show that the proposed pulse switching technique provides a promising solution for SSPAs using a high-power GaN HEMT.

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Section: Switching Time Analysis Of Bias Switching Driversupporting

confidence: 83%

Section: Switching Time Analysis Of Bias Switching Drivermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

An X-Band 100 W Gan Hemt Power Amplifier Using a Hybrid Switching Method for Fast Pulse Switching

Kim¹,

Cho²,

Kwon³

et al. 2017

PIER B

View full text Add to dashboard Cite

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Transmitter Architectures

2011

RF and Microwave Transmitter Design

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EPR and ODMR defect control in AlN bulk crystals

Soltamov

Ilyin

Gurin

et al. 2012

Phys. Status Solidi C

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The results of pulse electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optically detected magnetic resonance (ODMR) are presented to show the electron structure of deep level defect color center in AlN single crystals such as a nitrogen vacancy in neutral charge state (VN0) as well as a new type of point defect such as exchange–coupled pair of the nitrogen vacancies (VN‐VN). Analyzing spin density distribution of an unpaired VN0 electron on different ions of AlN crystalline lattice by means of high frequency ENDOR technique (94 GHz) give us a possibility to calculate hyperfine and quadrupole interactions (QI) with 27Al nuclei spins up to fourth coordinate sphere. Particularly data about quadrupole interactions allowed to estimate the fundamental parameter of AlN crystalline lattice in itself namely so called «crystalline field gradient» to be 4.9×1020V/m2 (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

Cited by 42 publications

References 9 publications

An X-Band 100 W Gan Hemt Power Amplifier Using a Hybrid Switching Method for Fast Pulse Switching

An X-Band 100 W Gan Hemt Power Amplifier Using a Hybrid Switching Method for Fast Pulse Switching

Transmitter Architectures

EPR and ODMR defect control in AlN bulk crystals

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