C-band GaN HEMT Power Amplifier with 220W Output Power

Yamanaka, Koji; Mori, K.; Iyomasa, Kazuhiro; Ohtsuka, Hiroshi; Noto, Hifumi; Nakayama, Minoru; Kamo, Yoshitaka; Isota, Yoji

doi:10.1109/mwsym.2007.380395

Cited by 22 publications

(15 citation statements)

References 8 publications

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“…9 [4,[6][7][8][9][14][15][16][17]. To the best of our knowledge, the PAE of 72.1% with 107.4 W output power is the highest ever reported of C-band GaN HEMT amplifiers operating with over 100 W output power.…”

Section: Measurement Resultsmentioning

confidence: 89%

“…C-band amplifiers with high output power and high power added efficiency (PAE) play a key role in many radio systems, such as satellite communication systems, mobile and wireless base stations [1,2]. Some GaN HEMT amplifiers with over 100 W output power at C-band have been reported [3][4][5][6][7][8]. Harmonic tuning technique [9,10] is now widely used to realize high efficiency, which can simultaneously achieve high efficiency and high output power.…”

Section: Introductionmentioning

confidence: 99%

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A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

Zhao

Zheng

et al. 2016

Solid-State Electronics

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Section: Measurement Resultsmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

Zhao

Zheng

et al. 2016

Solid-State Electronics

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“…Although solid state power amplifiers are relatively good candidates for high power generation in the S and C bands (2)(3)(4)(5)(6)(7)(8), e.g., 200 W at 2 GHz [3], their power gain performance rapidly deteriorates in the MMW range. Vacuum electronics amplifiers such as Traveling Wave Tubes (TWTs) have superior power and efficiency capabilities at MMW and THz regions compared to solid state power amplifiers.…”

Section: Introductionmentioning

confidence: 99%

Metamaterial-enhanced traveling wave tubes

Rashidi

Behdad

2014

IEEE International Vacuum Electronics Conference

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We present the design of a folded waveguide traveling wave tube (TWT) periodically loaded by epsilon negative (ENG) metamaterial slabs. When a given folded waveguide slow-wave structure (SWS) is loaded with ENG metamaterials, its band diagram is shifted to higher frequencies. To shift the band diagram back to the desired (lower) frequency of operation, we scale up the structure's dimensions. This enlargement of the SWS, however, allows for increasing the beam tunnel diameter of the SWS for a given frequency of operation and also increases the interaction impedance of the TWT. Both of these physical phenomena can be exploited to increase the gain of the TWT for a given number of periods in the SWS and achieve a higher output power level. This concept is expected to be particularly useful at millimeter-wave frequencies where the beam diameter and current are usually limited by the small dimensions of the SWS thereby limiting the gain and total output power of millimeter-wave TWTs. IntroductionThe growing need for high power sources at millimeterwave (MMW) frequencies has been motivated by a number of applications ranging from high-data rate communication systems to homeland security and radar applications [1]-[2]. Although solid state power amplifiers are relatively good candidates for high power generation in the S and C bands (2-8 GHz), e.g., 200 W at 2 GHz [3], their power gain performance rapidly deteriorates in the MMW range. Vacuum electronics amplifiers such as Traveling Wave Tubes (TWTs) have superior power and efficiency capabilities at MMW and THz regions compared to solid state power amplifiers. However, at these frequencies, the extremely small dimensions of the slow-wave structures (SWS) used in TWTs limits their maximum beam diameter and beam current and consequently their gain and total output power levels. Therefore, at these frequency bands, it is desirable to increase the size of the SWS of a TWT without decreasing the primary frequency band of operation of the SWS. This allows for increasing the beam diameter and total beam current of the TWT resulting in a higher gain and output power level.

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“…Furthermore, GaN HEMTs can operate at much higher drain voltages than GaAs allowing the use of smaller devices for the same output power [1]. Therefore, device impedances are higher, and improvement on broadband matching can be performed [6]. This paper presents the design procedure and the characterisation of two broadband 2-6 GHz high power amplifiers (HPAs) in GaN monolithic technology.…”

Section: Introductionmentioning

confidence: 99%

2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications

Gonzalez-Garrido

Grajal

Cubilla

et al. 2008

2008 European Microwave Integrated Circuit Conference

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This paper presents two MMIC broadband high power amplifiers of 4 mm of periphery at the output stage in the frequency band 2-6 GHz. The amplifiers are based on AlGaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They have been fabricated in two different european foundries: SELEX Sistemi Integrati and QINETIQ. SELEX has a gate process technology of 0.5μm, and devices of 10x100μm periphery in microstrip technology and QINETIQ has a gate-length of 0.25μm, and devices of 8x125μm in coplanar technology. The coplanar amplifier from QINETIQ has demonstrated an output power of 8W in continuous wave at V ds =20V which confirm model predictions. On the other hand, SELEX microstrip amplifier has a saturation power of 10W CW at V ds =25V and 4 GHz. This amplifier measured on-wafer in pulsed conditions exhibits a maximum power of 17W at V ds =30V.

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C-band GaN HEMT Power Amplifier with 220W Output Power

Cited by 22 publications

References 8 publications

A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

A high efficiency C-band internally-matched harmonic tuning GaN power amplifier

Metamaterial-enhanced traveling wave tubes

2-6 GHz GaN MMIC Power Amplifiers for Electronic Warfare Applications

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