c-Boron–aluminum nitride alloys prepared by ion-beam assisted deposition

Edgar, James H.; Smith, Deane K.; Eddy, Charles R.; Carosella, C.A.; Sartwell, B.D.

doi:10.1016/s0040-6090(96)08884-0

Cited by 23 publications

(17 citation statements)

References 18 publications

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“…Figure 10 presents high-angle annular dark-field scanning transmission microscopy (HAADF-STEM) image of the BAlN layer and diffraction pattern after Fast Fourier Transform (FFT). It exhibits mainly the typical pattern of the wurtzite crystal along the [11][12][13][14][15][16][17][18][19][20] zone axis, even though the diffraction spots are elongated due to the different tilts of columnar polycrystals.…”

Section: Baln Growth By Fme For Baln Layers Grownmentioning

confidence: 99%

BAlN thin layers for deep UV applications

Sundaram

Gmili

et al. 2015

Physica Status Solidi (a)

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International audienceIn this work, wurtzite BAlN layers with boron composition as high as 12% were successfully grown by MOVPE. The growth was performed at 650 °C and then annealed at 1020 °C. Low temperature growth was used in order to alleviate B-rich phase poisoning under high TEB/III ratio. The growth was performed by continuous epitaxy as well as by flow-modulate epitaxy. BAlN single layers with clearly defined X-ray diffraction peaks were achieved on AlN templates which are appropriate substrates for deep UV devices, as well as on GaN templates to facilitate distinguishing of the XRD peak of BAlN from the substrate peak. The layer demonstrated columnar crystalline features and inherited wurtzite structure from substrates.Cross-section STEM image (bright field) of 75 nm thick BAlN layers containing 12% boron taken along the [11−2 0] zone axis. Zone A is lattice-oriented along c-axis and zone B has columnar structure; (b) higher magnification image for the top part of the layer; (c) higher magnification image for the film/substrate interface

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Section: Baln Growth By Fme For Baln Layers Grownmentioning

confidence: 99%

BAlN thin layers for deep UV applications

Sundaram

Gmili

et al. 2015

Physica Status Solidi (a)

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“…Previous studies indicate that the extent of BN-AlN solubility is extremely limited because of the significant microstructural differences. [162][163][164][165] Effect of stoichiometry As a promising material for many applications, c-BN has been investigated by a variety of ion-or plasmaassisted deposition techniques. These investigations have led to a set of thumb rules for the formation of c-BN in terms of scaling parameters like ion-to-atomic boron and nitrogen flux ratios, ion energy, and substrate temperature.…”

Section: Effect Of Substratesmentioning

confidence: 99%

Review of synthesis and properties of cubic boron nitride (c-BN) thin films

Samantaray¹,

Singh²

2005

International Materials Reviews

128

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Cubic boron nitride (c-BN) thin films are of significant interest because of their diamond like structure and properties. c-BN shows high thermal conductivity, chemical inertness against ferrous metals even at high temperatures, wide band gap, and good transmittance over a wide spectral range from UV to visible. Applications of c-BN include hard protective coatings for cutting tools, in optical instruments as UV detectors, as emitters, and in high temperature electronic devices. However, synthesis of phase pure c-BN thin films continues to be very challenging. The present study reviews the current status of the synthesis, characterisation, mechanical, electrical, and optical properties of c-BN thin films. Both physical and chemical vapour deposition methods used for the preparation of the c-BN films are covered. In addition, different nucleation and growth models of c-BN formation and growth on different substrates are described. The influence of process parameters such as ion energy, growth temperatures, chemical precursors, bias, and impurities on the nucleation and growth is reviewed. Mechanical properties including hardness, elastic modulus, and stiffness of c-BN films are discussed. The latest developments in electrical properties of the c-BN films based on metal-insulatorsemiconductor (MIS) hetero-structures, interface states, impurity states, conduction mechanism, field emission properties, and negative electron affinity (NEA) are presented. The optical properties and cathodoluminescence characteristics of BN films are also discussed.

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“…However, challenges lie in the growth of this material. Phase separation would happen due to large bond mismatch of BN and other nitrides, and crystallinity was limited because of short diffusion length of boron and strong parasitic reaction in the gas phase [7][8][9].…”

Section: Introductionmentioning

confidence: 99%