2012
DOI: 10.1021/om300063y
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C–H Bond Amination by Photochemically Generated Transient Borylnitrenes at Room Temperature: A Combined Experimental and Theoretical Investigation of the Insertion Mechanism and Influence of Substituents

Abstract: A number of azidoboranes having substitution patterns that are derived from catechol (3), pinacol (4a), 1,2-diaminoethane (4b,c), 1,2-ethanedithiol (4d), and 1,2,4,5-tetrahydroxybenzene as well as acyclic dialkoxy species (5) were synthesized and, in the case of 4c (N,N′-ditosyl-2-azido-1,3,2-diazaborolane), also structurally characterized. The azidoboranes were photolyzed in cyclohexane solvent in order to investigate the tendency of the generated borylnitrenes to undergo intermolecular C−H insertion reaction… Show more

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Cited by 31 publications
(44 citation statements)
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“…In general, the high D values of all acylnitrenes can be rationalized in terms of the Oatom not being "willing" to give up its strong C=Obond by donating an electron to form aC = Nb ond and aC ÀOb ond. Boryl- [88] and silylnitrenes [51] also have relatively high D values (1.5-1.6 cm À1 )s imilar to alkylnitrenes,w ith little or no delocalization of spin onto B and Si. A D value of 1.540 cm À1 (j E/hc j = 0.0002 cm -1 )and little evidence of SOC are observed for trimethylsilylnitrene, [89a] and only modest SOC is calculated for silylnitrene [89b] (in contrast to very strong SOC and ah igh D value of 1.64 cm À1 in atriplet silylene,R 2 SiD).…”
Section: Triplet Nitrenes and Carbenes Spin Densities And Mixing Ofmentioning
confidence: 99%
“…In general, the high D values of all acylnitrenes can be rationalized in terms of the Oatom not being "willing" to give up its strong C=Obond by donating an electron to form aC = Nb ond and aC ÀOb ond. Boryl- [88] and silylnitrenes [51] also have relatively high D values (1.5-1.6 cm À1 )s imilar to alkylnitrenes,w ith little or no delocalization of spin onto B and Si. A D value of 1.540 cm À1 (j E/hc j = 0.0002 cm -1 )and little evidence of SOC are observed for trimethylsilylnitrene, [89a] and only modest SOC is calculated for silylnitrene [89b] (in contrast to very strong SOC and ah igh D value of 1.64 cm À1 in atriplet silylene,R 2 SiD).…”
Section: Triplet Nitrenes and Carbenes Spin Densities And Mixing Ofmentioning
confidence: 99%
“…[12,13] Nitrene 6 and closely relatedb orylnitrenes are very reactive towards sigma bonds (e.g.,C (sp 3 )ÀH, HÀH) after photoexcitation,m ost likely due to the formation of the highly electrophilics inglet nitrene. [14][15][16][17][18] Borylnitrene 6,h owever,a lso shows very high thermal reactivity towardsO 2 in an argon matrixb ecause annealing in the presence of O 2 quickly results in the formation of nitroso oxide 7a (Scheme 1b). [12] The latter was shownt ou ndergo, upon photoexcitation (l = 254 nm), af ormal dyotropic rearrangement [19][20][21] to nitritoborane 9a.N ot only is the thermal reactivity of 6 towards O 2 higher than that of aryl nitrenes, but also the final oxidation product differs because not the nitro-(CatBNO 2 )b ut the nitritoborane( CatBONO) is formed.…”
Section: Introductionmentioning
confidence: 99%
“…Ar elated process has been observed by Paetzold,[1a] who prepared iminoboranes via alkyl-group migration (R 2 N À B(R')-N!R 2 N-B N À R') involving at ransient boranitrene. [24] Cummins and Foxa lso observed nitrogen extrusion from the azidoborate salt nBu [ 25] To gain insight into the mechanism by which IPr·HB = NH·BAr (3). Notably thermolysis of the deutero analogue 3d did not yield any discernable H/D kinetic isotope effect ( Figure S4), [26] suggesting that N 2 loss and formation of at ransient nitrene is the rate-determining step.…”
mentioning
confidence: 99%
“…Ar elated process has been observed by Paetzold,[1a] who prepared iminoboranes via alkyl-group migration (R 2 N À B(R')-N!R 2 N-B N À R') involving at ransient boranitrene. [24] Cummins and Foxa lso observed nitrogen extrusion from the azidoborate salt nBu 4 N-[(N 3 )B(C 6 F 5 ) 3 ]inthe presence of (THF)U[N(tBu)Ar] 3 (Ar = 3,5-Me 2 C 6 H 3 )t oy ield the uranium(V) nitride nBu 4 N-[(F 5 C 6 ) 3 B·N=U{N(tBu)Ar}] 3 . [25] To gain insight into the mechanism by which IPr·HB = NH·BAr F 3 (4)i sf ormed, the deuterium-labeled analogue IPr·BD 2 N 3 ·BAr F 3 (3-d)w as synthesized (Scheme 3).…”
mentioning
confidence: 99%