2023
DOI: 10.1039/d2nh00440b
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C3N2: the missing part of highly stable porous graphitic carbon nitride semiconductors

Abstract: Two-dimensional (2D) porous graphitic carbon nitrides (PGCNs) with semiconducting features have attracted wide attention because of built-in pores with various active sites, large surface area, and high physicochemical stability. However,...

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Cited by 13 publications
(6 citation statements)
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“…2(b) further confirm that both C 3 N 2 monolayers exhibit notable energy stability advantages over synthesized 2D carbon nitride materials such as C 3 N 5 (−5.81 eV per atom), 14 C 3 N 4 (−6.05 eV per atom), 8 C 6 N 6 (−6.24 eV per atom), 16 and C 4 N 3 (−6.26 eV per atom). 15 Notably, P-C 3 N 2 exhibits comparable formation and cohesive energies to the recently theoretically proposed T-C 3 N 2 monolayer, 41 and it is more energetically stable. These findings indicate that both P-C 3 N 2 and I-C 3 N 2 possess excellent energy stability and are promising candidates for experimental synthesis.…”
Section: Resultsmentioning
confidence: 63%
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“…2(b) further confirm that both C 3 N 2 monolayers exhibit notable energy stability advantages over synthesized 2D carbon nitride materials such as C 3 N 5 (−5.81 eV per atom), 14 C 3 N 4 (−6.05 eV per atom), 8 C 6 N 6 (−6.24 eV per atom), 16 and C 4 N 3 (−6.26 eV per atom). 15 Notably, P-C 3 N 2 exhibits comparable formation and cohesive energies to the recently theoretically proposed T-C 3 N 2 monolayer, 41 and it is more energetically stable. These findings indicate that both P-C 3 N 2 and I-C 3 N 2 possess excellent energy stability and are promising candidates for experimental synthesis.…”
Section: Resultsmentioning
confidence: 63%
“…S1. † Among these, T-C 3 N 2 41 and pc-C 3 N 2 42 have been previously reported in theoretical studies. Further formation energy calculations revealed that P-C 3 N 2 , T-C 3 N 2 , and I-C 3 N 2 have energies ≤0.30 eV per atom.…”
Section: Papermentioning
confidence: 90%
“…The uniaxial stress–strain curves reveal that the tensile strength in the x and y directions is 81.8 and 192.5 N m –1 , respectively, with corresponding fracture strains of 16 and 22%. This is better than that of C 2 N-h2D (with uniaxial tensile strain limits of 13 and 17% along the x and y directions) and larger than those of C 3 N 5 (12%), T-C 3 N 2 (14%), and g-C 3 N 4 (11%) . The reason for the larger axial fracture strain is that some carbon–carbon double bonds directly bear the tensile load.…”
Section: Resultsmentioning
confidence: 80%
“…The computed values for Young’s modulus [ Y (θ)] of single-layer p-C 2 N, as shown in Figure a, exhibit significant anisotropy. The maximum value of Y (θ) of p-C 2 N is 85.79 N/m, similar to that of Cu 2 Si (93 N m –1 ), larger than that of C 3 N 5 (38 N m –1 ) and silicene (71 N m –1 ), and lower than that of C 2 N-h2D (159 N m –1 ), T-C 3 N 2 (177 N m –1 ), and graphene (340 N m –1 ), indicating that the p-C 2 N monolayer has favorable in-plane flexibility. Poisson’s ratio [ v (θ)] of the p-C 2 N monolayer, as shown in Figure b, is from 0.16 to 0.33, with an average of 0.26.…”
Section: Resultsmentioning
confidence: 82%
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