C–V and DLTS studies of radiation induced Si–SiO2 interface defects

Capan, Ivana; Janicki, Vesna; Jačimović, Radojko; Pivac, Branko

doi:10.1016/j.nimb.2011.08.065

Cited by 9 publications

(3 citation statements)

References 14 publications

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“…Among them, thermal noise and tunneling-assisted noise are related to the operating temperature, doping concentration, and excess voltage of the device. Trap-assisted noise is related to defects introduced during the CMOS manufacturing process, and trap defects introduced during irradiation also produce trap-assisted noise [33][34][35][36][37]. The thermal generation and band-to-band tunneling effects of free carriers within the depletion region collectively contribute to the DCR, which is largely dependent on temperature.…”

Section: Discussionmentioning

confidence: 99%

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Xun,

Li,

Feng

et al. 2024

Electronics

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The effects of proton irradiation on CMOS Single-Photon Avalanche Diodes (SPADs) are investigated in this article. The I–V characteristics, dark count rate (DCR), and photon detection probability (PDP) of the CMOS SPADs were measured under 30 MeV and 52 MeV proton irradiations. Two types of SPAD, with and without shallow trench isolation (STI), were designed. According to the experimental results, the leakage current, breakdown voltage, and PDP did not change after irradiation at a DDD of 2.82 × 108 MeV/g, but the DCR increased significantly at five different higher voltages. The DCR increased by 506 cps at an excess voltage of 2 V and 10,846 cps at 10 V after 30 MeV proton irradiation. A γ irradiation was conducted with a TID of 10 krad (Si). The DCR after the γ irradiation increased from 256 cps to 336 cps at an excess voltage of 10 V. The comparison of the DCR after proton and γ-ray irradiation with two structures of SPAD indicates that the major increase in the DCR was due to the depletion region defects caused by proton displacement damage rather than the Si-SiO2 interface trap generated by ionization.

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Section: Discussionmentioning

confidence: 99%

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Xun,

Li,

Feng

et al. 2024

Electronics

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“…To obtain even more information about defects in embedded NCs and at their interfaces, deep level transient spectroscopy (DLTS) can be applied. DLTS is a well-established technique which is commonly used in studying trap states in the bulk semiconductors [38], and has also been successfully applied in studying traps at the Si-SiO 2 interfaces [39] and within NCs [40,41]. Accordingly, electrons/holes can be thermally emitted out from the NCs and then be detected by DLTS only when their electronic states are lifted above/below the bulk Fermi level.…”

Section: Properties and Characterizationmentioning

confidence: 99%

An Outlook on Silicon Nanocrystals for Optoelectronics

Capan

Carvalho

Coutinho

2016

JGE

Self Cite

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Silicon nanocrystals have emerged as promising material components which extend the realm of the application of its bulk counterpart beyond traditional boundaries. Over the last two decades of research, their potential for application on areas that range from optoelectronics to information storage has been progressively unraveled. Nevertheless, as technology steps forward, new challenges are arising. Here we consider what has been achieved and what are the current limitations on the fields of growth, characterization and modeling of silicon nanocrystals.

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“…DLTS has been mostly used for studying defects in semiconductors [ 36 ]. It has been successfully applied in studying the Si–SiO 2 interface related defects [ 37 ] and in studying NCs [ 25 , 38 ]. In the case of NCs, the DLTS can detect only charge carriers thermally emitted from the NCs.…”

Section: Reviewmentioning

confidence: 99%

Silicon and germanium nanocrystals: properties and characterization

Capan¹,

Carvalho²,

Coutinho³

2014

Beilstein J. Nanotechnol.

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SummaryGroup-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their potential for application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with regard to growth, characterization and modeling of silicon and germanium nanocrystals and related materials.

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C–V and DLTS studies of radiation induced Si–SiO2 interface defects

Cited by 9 publications

References 14 publications

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

An Outlook on Silicon Nanocrystals for Optoelectronics

Silicon and germanium nanocrystals: properties and characterization

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