C–V characteristics of epitaxial germanium metal–oxide–semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric

Tang, Shih Hsuan; Kuo, Chien-I; Trinh, Hai Dang; Hudait, Mantu K.; Chang, Edward Yi; Hsu, Ching Yi; Su, Yung Hsuan; Luo, Guang-Li; Nguyễn, Hồng Quân

doi:10.1016/j.mee.2012.03.014

Cited by 4 publications

(3 citation statements)

References 16 publications

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“…30 Considering several material choices and strain engineering in the channel, Ge epitaxial films grown on a large bandgap GaAs material is of immense interest due to lattice match (mismatch $0.07%) which ensures larger critical thickness, lower dislocation density, and strain-free Ge epitaxial film. As a result, high-hole mobility of Ge and its narrow bandgap (E g ¼ 0.67 eV) make the GaAs/Ge heterojunction suitable for the fabrication of p-channel QW field effect transistors, solar cells, 31 MOSFETs, 32,33 and tunnel transistors. 34 Ge QW transistor structures on GaAs/Si with a GaAs upper barrier in a QW configuration are essential in order (i) to eliminate parallel conduction, 2,3 (ii) to provide large valence band offset [35][36][37][38] for hole confinement, (iii) to achieve high-quality high-k/III-V barrier interface with lower Dit, 39 (iv) to control lattice mismatch, 3 (v) to have better interface properties, (vi) to provide modulation doping 4,8 in the Ge QW structure, (vii) to control the OFF state leakage, and (viii) to improve Ohmic contact.…”

Section: Introductionmentioning

confidence: 99%

Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates

Hudait¹,

Zhu²,

Jain³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Structural, morphological, and band offset properties of GaAs/Ge/GaAs heterostructures grown in situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers, connected via vacuum transfer chamber, were investigated. Reflection high energy electron diffraction (RHEED) studies in all cases exhibited a streaky reconstructed surface pattern for Ge. Sharp RHEED patterns from the surface of GaAs on epitaxial Ge/(111)A GaAs and Ge/(110)GaAs demonstrated a superior interface quality than on Ge/(100)GaAs. Atomic force microscopy reveals smooth and uniform morphology with surface roughness of Ge about 0.2-0.3 nm. High-resolution triple axis x-ray rocking curves demonstrate a high-quality Ge epitaxial layer as well as GaAs/Ge/GaAs heterostructures by observing Pendell€ osung oscillations. Valence band offset, DE v , have been derived from x-ray photoelectron spectroscopy (XPS) data on GaAs/Ge/GaAs interfaces for three crystallographic orientations. The DE v values for epitaxial GaAs layers grown on Ge and Ge layers grown on (100), (110), and (111)A GaAs substrates are 0.23, 0.26, 0.31 eV (upper GaAs/Ge interface) and 0.42, 0.57, 0.61 eV (bottom Ge/GaAs interface), respectively. Using XPS data obtained from these heterostructures, variations in band discontinuities related to the crystallographic orientation have been observed and established a band offset relation of DE V ð111ÞGa > DE V ð110Þ > DE V ð100ÞAs in both upper and lower interfaces. V

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Section: Introductionmentioning

confidence: 99%

Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates

Hudait¹,

Zhu²,

Jain³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

show abstract

“…Considering several material choices and strain engineering in the channel, Ge epitaxial film grown on a large bandgap GaAs material is of immense interest due to lattice match (mismatch $0.07%) which ensures larger critical thickness, lower dislocation density, and strain-free Ge epitaxial film. As a result, highhole mobility of Ge and its narrow bandgap (E g ¼ 0.67 eV) make the GaAs/Ge heterojunction suitable for the fabrication of p-channel QW field effect transistors, 17 solar cells, 18 metal-oxide semiconductor field effect transistors, 19,20 millimeter-wave mixer diodes, 21 temperature sensors, 22 photodetectors, 23,24 and quantum confinement devices. 25 In order to realize a high-performance Ge QW transistor structure, higher bandgap III-V barrier layers are essential in order (i) to eliminate parallel conduction, 2,3 (ii) to provide large valence band offset (DE v !…”

Section: Introductionmentioning

confidence: 99%

In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy

Hudait

Zhu

Jain

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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High-quality epitaxial Ge layers for GaAs/Ge/GaAs heterostructures were grown in situ in an arsenic-free environment on (100) off-oriented GaAs substrates using two separate molecular beam epitaxy (MBE) chambers, connected via vacuum transfer chamber. The structural, morphological, and band offset properties of these heterostructures are investigated. Reflection high energy electron diffraction studies exhibited (2 Â 2) Ge surface reconstruction after the growth at 450 C and also revealed a smooth surface for the growth of GaAs on Ge. High-resolution triple crystal x-ray rocking curve demonstrated high-quality Ge epilayer as well as GaAs/Ge/(001)GaAs heterostructures by observing Pendell€ osung oscillations and that the Ge epilayer is pseudomorphic. Atomic force microscopy reveals smooth and uniform morphology with surface roughness of $0.45 nm and room temperature photoluminescence spectroscopy exhibited direct bandgap emission at 1583 nm. Dynamic secondary ion mass spectrometry depth profiles of Ga, As, and Ge display a low value of Ga, As, and Ge intermixing at the Ge/GaAs interface and a transition between Ge/GaAs of less than 15 nm. The valence band offset at the upper GaAs/Ge-(2 Â 2) and bottom Ge/(001)GaAs-(2 Â 4) heterointerface of GaAs/Ge/GaAs double heterostructure is about 0.20 eV and 0.40 eV, respectively. Thus, the high-quality heterointerface and band offset for carrier confinement in MBE grown GaAs/Ge/GaAs heterostructures offer a promising candidate for Ge-based p-channel high-hole mobility quantum well field effect transistors. V

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“…As a dielectric metal oxide, Al 2 O 3 exhibits a high transparency, large bandgap and excellent electrical insulation properties, hence it is widely applied in electronic devices and electrochemistry, e.g., as a protection layer [1,2,3,4,5,6]. Commonly used methods for making Al 2 O 3 films include sol-gel, sputtering, evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD) and atomic layer deposition (ALD) [7,8,9,10,11].…”

Section: Introductionmentioning

confidence: 99%

Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

et al. 2019

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An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most commonly used precursor is trimethylaluminum, which is highly reactive and pyrophoric. In the purpose of searching for a more ideal Al source, the non-pyrophoric aluminum tri-sec-butoxide ([Al(OsBu)3], ATSB) was introduced as a novel precursor for atomic layer deposition (ALD). After demonstrating the deposition of Al2O3 via chemical vapor deposition (CVD) and ‘pulsed CVD’ routes, the use of ATSB in an atomic layer deposition (ALD)-like process was investigated and optimized to achieve self-limiting growth. The films were characterized using spectral reflectance, ellipsometry and UV-Vis before their composition was studied. The growth rate of Al2O3 via the ALD-like process was consistently 0.12 nm/cycle on glass, silicon and quartz substrates under the optimized conditions. Scanning electron microscopy and transmission electron microscopy images of the ALD-deposited Al2O3 films deposited on complex nanostructures demonstrated the conformity, uniformity and good thickness control of these films, suggesting a potential of being used as the protection layer in photoelectrochemical water splitting.

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C–V characteristics of epitaxial germanium metal–oxide–semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric

Cited by 4 publications

References 16 publications

Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates

Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates

In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy

Use of a New Non-Pyrophoric Liquid Aluminum Precursor for Atomic Layer Deposition

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