2018
DOI: 10.1007/s11664-018-6629-3
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C60 Concentration Influence on MEH-PPV:C60 Bulk Heterojunction-Based Schottky Devices

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Cited by 15 publications
(4 citation statements)
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“…On the other side at the interface C 1 shows the double layer capacitance between electrolyte and Pt counter electrode and as well as between electrolyte and TiO 2 film [27,28]. The values of all the parameters of Nyquist plots of DSSC based on TiO 2 photoanode with the equivalent circuit are summarized in Table. In the bode plot of cell based on photoanode TiO 2 under the solar irradiation, the frequency was shifted in higher frequency region with the TiO 2 photoanode as shows in figure 4(b).According to curve recombination charge transfer processes at the TiO 2 /dye/electrolyte interface is low and enhance the electron transmission [29,30]. On the other hand illumination condition f max is inversely proportional to the electron transport time as τ s =1/ (2πf max ), increment in f max shows the increased rate of charge transport process in DSSC [24].…”
Section: Resultsmentioning
confidence: 94%
“…On the other side at the interface C 1 shows the double layer capacitance between electrolyte and Pt counter electrode and as well as between electrolyte and TiO 2 film [27,28]. The values of all the parameters of Nyquist plots of DSSC based on TiO 2 photoanode with the equivalent circuit are summarized in Table. In the bode plot of cell based on photoanode TiO 2 under the solar irradiation, the frequency was shifted in higher frequency region with the TiO 2 photoanode as shows in figure 4(b).According to curve recombination charge transfer processes at the TiO 2 /dye/electrolyte interface is low and enhance the electron transmission [29,30]. On the other hand illumination condition f max is inversely proportional to the electron transport time as τ s =1/ (2πf max ), increment in f max shows the increased rate of charge transport process in DSSC [24].…”
Section: Resultsmentioning
confidence: 94%
“…Figure 7(b) shows the dark J-V curve of champion perovskite devices. By fitting the Schottky equation to the dark J-V curve, the performance parameters are analyzed by the following expression [30,31]: where q is the electron charge, V is the voltage, k is the Boltzmann constant, T is the absolute temperature, η is the ideal factor of the diode, J 0 is the reverse saturation current density, Φ B is the Schottky barrier height, and A * is the Richardson's constant. The performance parameters of the PSCs obtained are shown in table 1.…”
Section: Resultsmentioning
confidence: 99%
“…CPE 2 replicates the chemical capacitance ( C μ ), which provides information about the charge accumulation at the interfaces. The R CT , R rec and C μ and effective lifetime ( τ n ) of the device are found to be 1.896 × 10 2 kΩ, 400.65 Ω, 0.2977 µF and 119.302 µs, respectively [28].…”
Section: Resultsmentioning
confidence: 99%