C60 single crystal films on GaAs/InAs(001) surfaces

Dynamic force microscopy study of the Ga-rich c ( 8 × 2 ) and As-rich c ( 4 × 4 ) reconstructions of the GaAs(001) surface Structure and morphology of the As-rich and the stoichiometric GaAs (114)A surface J. Appl. Phys. 95, 7645 (2004); 10.1063/1.1707212Structure and interface composition of Co layers grown on As-rich GaAs(001) c(4×4) surfaces J.We have systematically investigated, by using scanning tunneling microscopy, the adsorption and film growth of C 60 on the various GaAs͑001͒ surface phases prepared by molecular-beam epitaxy. For most phases, the C 60 overlayer exhibits the usual close-packed fcc͑111͒ configuration with its lattice constant close to that of the bulk C 60 crystal. However, in the case of C 60 on the As-rich 2ϫ4 substrate, the epitaxial growth is found to be quite different and unique; C 60 film takes its ͑110͒ crystalline axis; the C 60 overlayer is highly strained with a lattice expansion of ϳ13%, and this structure is very stable at least up to 10 ML. We will address the underlying formation mechanism of this new structure in terms of a charge transfer from the As-dangling bonds to C 60 s and a site-specific C 60 -substrate interaction, as confirmed by molecular dynamic simulations. The present system provides a unique opportunity to study fullerene and/or noble-gas related two-dimensional phenomena, and demonstrates a potential for fabrication of novel fullerene-based devices, such as strained superlattice structures.

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C60 single crystal films on GaAs/InAs(001) surfaces

Cited by 3 publications

References 17 publications

Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces

Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces

Scanning tunneling microscopy of III-V compound semiconductor (001) surfaces

Extraordinary growth of C60 on a GaAs(001) As-rich 2×4 surface

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