CAD-oriented equivalent-circuit modeling of on-chip interconnects on lossy silicon substrate

Abstract

for planar spiral inductors on silicon, Int Electron Dev Mtg, 1996, pp. 155-158. 6. J.R. Long and M.A. Copeland, The modeling, design, and

Frequency‐dependent expressions for inductance and resistance of microstrip line on silicon substrate

“…Similarly, Figure 3 shows the change in the distributed inductance, L(), as a function of frequency. It is observed that the values of the inductance and resistance per unit length, calculated from the new formulas, are found to be in good agreement with those of [2,6] (full-wave quasi-TEM technique and CAD-oriented circuit modeling approach). The agreement is excellent over the entire frequency range of 0.2-10 GHz.…”

High-frequency characterization of on-chip digital interconnects

“…To incorporate the effects, the more general solution is to modify the simulator as proposed by Chang [27]. The frequency-dependent effects can also be approximated with an equivalent model as shown by Deutsch [21], Krauter [33], Yue [34], and Zheng [35]. An RC network to model the frequency-dependent shunt component was used in [23].…”

Wide‐band modelling of CMOS interconnections and voiding damages with the lumped element LE‐FDTD method

“…Depending on its geometry, a CMOS interconnection can be approximated as a metalinsulator-semiconductor (MIS) transmission line or [2,3] as a coplanar waveguide (CPW) on a semiconductor substrate [4,5]. The first model can be applied when the ground return is provided by the semiconductor substrate, while the second model better describes the situation Contract/grant sponsor: IMM-LAMEL Institute of the Italian National Research Council (CNR) of a signal trace embedded between two coplanar ground lines, typically encountered in highspeed digital interconnections.…”