Cadmium complex possessing simultaneously silanethiolato- and dithiocarbamato-ligands. A novel single-source precursor of cadmium sulfide

Abstract

Thermal decomposition of suitable coordination compounds may be used as efficient route for fabrication of semiconducting layers. A new potential CdS precursor-a cadmium complex with all-sulfur Cd-coordination sphere [Cd{l-SSi(OBu t ) 3 }(S 2 CNC 4 H 8 )] 2 1-has been prepared, and its properties are investigated. The complex was obtained in the reaction between dimeric bis(tri-tert-butoxysilanethiolato)cadmium(II) [Cd{SSi(OBu t ) 3 } 2 ] 2 and ammonium N,Ntetrametylene-dithiocarbamate and characterized by spectral methods (IR, UV-Vis, MS, and NMR). X-ray structure analysis revealed the complex as molecular and dimeric in solid state with each of chelating dithiocarbamate ligands bonded to one Cd center and sulfur atoms from two tri-tertbutoxysilanethiolato ligands bridging metallic centers and thus completing the CdS 4 coordination sphere. Thin film of the precursor prepared on SiO 2 substrates via spin-coating technique was analyzed by AFM. Its decomposition was studied by thermal analysis methods (TG, DSC, and TG-FTIR). After melting at 227°C, [Cd{l-SSi(OBu t ) 3 } (S 2 CNC 4 H 8 )] 2 undergoes endothermic decomposition leading to CdS as the only solid product further identified by XRD, EDS, FIR as hexagonal CdS form. Its morphology is characteristic and may be described as ''micro-noodles''.

AACVD of Molybdenum Sulfide and Oxide Thin Films From Molybdenum(V)‐based Single‐source Precursors**

“…A growing body of work is emerging that investigates methods to produce metal sulfide nanomaterials, that use metal complexes containing (N,N‐dialkyl) dithiocarbamate ligands ( ‐ S 2 CNAk 2 , where Ak = Me, Et, i Pr, etc.) as SSPs for metal sulfide nanoparticle synthesis . The use of SSPs of Mo(S 2 CNAk 2 ) x complexes has previously been explored in deposition studies using AACVD, and solid‐state thermolysis, to produce MoS 2 nanomaterials, but at relatively high temperatures (425 °C and above) to facilitate the decomposition of the precursors.…”

Zinc and cadmium thioamidate complexes: rational design of single-source precursors for the AACVD of ZnS

“…41 Unsurprisingly, investigations into CdS single-source precursors often overlap with those of ZnS, including the use of compounds featuring thiourea, [42][43][44] thiobiurets, 38,45 thiocarboxylates 35 and thiocarbamates. [46][47][48][49][50][51][52] Additionally, dithioactylacetonates, 53 xanthates [54][55][56][57] and dialkyldithiophosphates [58][59][60][61] have been studied, often for deployment in solvothermal processes. Despite the interest in CdS buffer layers, only a handful of single-source precursor designs have been used in AACVD.…”

Synthesis, X-ray Single-Crystal Structural Characterization, and Thermal Analysis of Bis(O-alkylxanthato)Cd(II) and Bis(O-alkylxanthato)Zn(II) Complexes Used as Precursors for Cadmium and Zinc Sulfide Thin Films

“…Alkylxanthato cadmium and zinc complexes have been used as single source molecular precursors toward thin films of cadmium sulfide (CdS) and zinc sulfide (ZnS), respectively. − CdS is a II–VI compound semiconductor with a wide direct band gap (2.4 eV), making it useful in a variety of electronic and photovoltaic applications . CdS crystallizes in both hexagonal (wurtzite) and cubic (zinc blende) polymorphs.…”