Cadmium mercury telluride and the new generation of photoelectronic devices

Ponomarenko, V. P.

doi:10.1070/pu2003v046n06abeh001372

Cited by 17 publications

(8 citation statements)

References 27 publications

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“…Получение эпитаксиальных слоев твердых растворов Cd x Hg 1−x Te обладающих высоким структурным совершенством и электрофизическими параметрами, которые могут быть использованы для разработки приемников излучения ИК−диапазона -важная практическая задача [1,2]. Качество эпитаксиальных слоев определяется как плотностью дефектов, ориентацией, морфологией поверхности подложек CdTe, так и способом, видом, качеством химической обработки перед процессом эпитаксиального наращивания [3][4][5].…”

Section: Introductionunclassified

The effect chemical treatment of the substrate cadmium telluride on the quality of epitaxial structures

Paramonov

Новикова²,

Kosushkin

2019

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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The etching of wafers of cadmium telluride in aqueous and nonaqueous solutions before the epitaxial process of building structures CdxHg1-xTe and its influence on the surface quality of epitaxial layers. As the etchants investigated 2—20 % solution of bromine in isobutyl alcohol, 5 % solution of bromine in methanol, dimethylsulfoxide, ethylene glycol, solutions of bromine in hydrobromic acid and mixed with glycerin, a saturated solution of potassium dichromate in sulfuric acid. The speed of etching was varied from 0.2 to 9 µm/min. Polishing Set nature of the etching substrate of cadmium telluride in 5 % solution of bromine in i-butanol, the dissolution process is diffusion in nature and is limited by the mass transfer of the reactants in the temperature range of 10—60 °C, depending on the concentration of bromine and the viscosity of the solution. Studied the morphology and surface finish of epitaxial layers of CdxHg1-xTe, depending on the method of etching the original substrate. Found the optimal compositions of etchants for precipitaciones processing of obtaining structures with a height of asperities of the surface at 0.1 atm.

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Section: Introductionunclassified

The effect chemical treatment of the substrate cadmium telluride on the quality of epitaxial structures

Paramonov

Новикова²,

Kosushkin

2019

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

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“…It did not require any thermal activation annealing and allowed forming the p-n junctions in р -Сd x Hg 1-x Te with relatively thick wide gradient band gap Cd x Hg 1-xTe passivation layers 2 . Now several companies have implemented this method to fabricate the second-generation infrared photodiode arrays 3,4 . The key features of IM formed p-n structures in MCT have been recently reviewed 5 .…”

Section: Introductionmentioning

confidence: 99%

Type conductivity conversion in MOCVD Cd x Hg 1-x Te/GaAs hetero-structures under ion milling

Іжнін¹,

Bogoboyashchyy

Kotkov

et al. 2005

SPIE Proceedings

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P-n conductivity type conversion under ion milling in MOCVD p-Cd x Hg 1-x Te/GaAS multi-layer hetero-structures is considered. It was revealed that CdTe (1 µm thick) passivation layer displayed the protective properties regarding ion milling action on active layer. P-n conversion at ion milling was observed in structures with 0.1-0.2 µm thick CdTe passivation layer; however, the converted depth (7 µm) was smaller than that in the similar homogeneous samples (15 µm). It was shown that the main properties of the converted p-n structures with thin CdTe layer were the same as in homogeneous samples. Ion milling resulted in forming of the typical n + -n -р + structure with damaged n + -layer and main converted n-layer characterised by very low electron concentration. The relaxation of p-n structure electrical properties was also studied.

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“…Now several companies have implemented this method to fabricate of the second-generation infrared photodiodes arrays 4,5 . Major features of IM formed p-n structures in MCT have been recently reviewed 6 .…”

Section: Introductionmentioning

confidence: 99%

Regularities of the Cd x Hg 1-x Te p-n junction formation by ion milling

Іжнін¹,

Bogoboyashchyy

Sizov

2005

SPIE Proceedings

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The main features of p-n conductivity type conversion by ion milling in vacancy-doped p-Cd x Hg 1-x Te are considered. A diffusion model of the Hg interstitials source formation in MCT crystals under IM was proved through investigation of conversion depth dependence on composition. The model explains, both quantitatively and qualitatively, conversion depth dependencies on the IM temperature and the alloy composition. The most important factor, which defines these dependencies, is an electric field located at the interface between the p-type defect layer and the n-type converted layer and in the grad band region. It was demonstrated that main features of carrier distribution over the p-n structure depth remained after 10 years samples storage. The relaxation of electrical properties of the n-layer main part after IM was explained by dissociation of donor complexes and centers formed by Hg interstitials with residual I and V group acceptor impurities. It was also demonstrated that IM results in forming a complex damaged n + -layer including several sub-layers with different nature of electron conductivity. An analysis of how electrons concentration relax in the n + -layer allows interpreting the nature of conductivity in one sub-layer through trapping mercury interstitials by dislocations and dislocation loops. The conductivity relaxation in this sub-layer occurs because the structure of such defects is rebuilt, with donor properties being lost.

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Cadmium mercury telluride and the new generation of photoelectronic devices

Cited by 17 publications

References 27 publications

The effect chemical treatment of the substrate cadmium telluride on the quality of epitaxial structures

The effect chemical treatment of the substrate cadmium telluride on the quality of epitaxial structures

Type conductivity conversion in MOCVD Cd x Hg 1-x Te/GaAs hetero-structures under ion milling

Regularities of the Cd x Hg 1-x Te p-n junction formation by ion milling

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