Cadmium Oxide:Titanium Dioxide Composite Based Photosensitive Diode

Karabulut, Abdulkerim; Dere, A.; Al‐Sehemi, Abdullah G.; Al-Ghamdi, Ahmed A.; Yakuphanoğlu, F.

doi:10.1007/s11664-018-6647-1

Cited by 29 publications

(5 citation statements)

References 48 publications

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“…This indicates the presence of interfacial charges in the heterostructure but does not contribute to the capacitance due to their inability to follow the alternating current (AC) signal at high frequency. [76,77] In addition, some researchers studying on negative capacitance reported that the negative capacitance observed at high frequency could be attributed to the inductive effect caused by the injection of high levels of minority carriers into the semiconductor. [63,78] The G-V graphs of undoped and Li-doped TiO 2 diodes in the frequency range of 10-500 kHz are shown in Figure 13a-d.…”

Section: Electrical Properties Of Fabricated Photodiodesmentioning

confidence: 99%

“…When frequency increases, the conductance of diodes increases due to series resistance and the states of the interface. [76,77] The series resistance of a diode is an important parameter as it affects the capacitance and conductance of diodes. Figure 14a-d demonstrates the variation of R s versus V at the various frequencies for different Li doping.…”

Section: Electrical Properties Of Fabricated Photodiodesmentioning

confidence: 99%

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The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Rüzgar

2020

Physica Status Solidi (a)

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TiO 2 has received intense attention for optoelectronic applications due to its excellent properties, such as non-toxicity, low cost, and simple preparation. Herein, the influence of Li doping both on the structural and optical characteristics of TiO 2 thin films and on optoelectronic properties of TiO 2-based photodiodes is investigated. The root-mean-square (RMS) roughness values obtained from the atomic force microscopy (AFM) results and the optical bandgap energies calculated from the Tauc method vary between 3.40 and 24.53 nm and between 3.58 and 3.75 eV depending on the increase in Li doping, respectively. The ideality factor (n) values of the diodes, which provided information about the performance of diodes, are calculated between 5.92 and 9.74. The lowest n value of 5.92 is obtained for 2% Li-doped diode. All the fabricated diodes demonstrate a good photodiode behavior, and the maximum photoresponsivity value of 6.74 Â 10 À2 A W À1 is obtained for 10% Li:TiO 2. In addition, the C-V, G-V, and R s-V characteristics of diodes are examined for different frequencies. Li doping has improved the optoelectrical performance of the TiO 2-based photodiodes. Thus, the Li:TiO 2-based photodiode can be a candidate for optoelectronic applications.

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Section: Electrical Properties Of Fabricated Photodiodesmentioning

confidence: 99%

Section: Electrical Properties Of Fabricated Photodiodesmentioning

confidence: 99%

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Rüzgar

2020

Physica Status Solidi (a)

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“…Studies that explain the synthesis and characterization of various materials are very interesting for researchers to study, especially those using the basic precursor material, namely SnO2, where these materials are closely related to various technologies that support community needs, which of course will increase and develop every year . SnO2 is widely applied to electronic devices such as diodes (Lee et al, 2019), transistors (Dou et al, 2019), capacitors (Dai et al, 2021), solar cells (Mikolášek, 2017;Altinkaya et al, 2021;Luo et al, 2022), liquid crystal displays (Zhang et al, 2021;Chu et al, 2021;, gas sensors (Zhou et al, 2018;Karabulut et al, 2018), and other optoelectronic equipment (Rana et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

Doyan

Susilawati

Muliyadi³

2022

jppipa, pendidikan ipa, fisika, biologi, kimia

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The purpose of this study is to analyze the quality of optical properties such as energy band gap of thin layer of tin oxide doped with aluminum, tin oxide doped with fluorine, tin oxide doped with indium, tin oxide doped with aluminum-fluorine, tin oxide doped with aluminum-indium, and tin oxide doped with aluminum-fluorine-indium. The thin layer was synthesized using the sol-gel spin coating method. The ratio of basic ingredients and doping used in this study was 95:5% and 85:15%. The thin layer that has been formed is then heated at a temperature of 100 and 200 0C. The results of the analysis of optical properties showed that the largest values of direct and indirect energy band gap are in a thin layer of tin oxide doped with indium at a percentage of 95:5% for a temperature of 100 0C, namely 3.62 and 3.92 eV. The lowest values of direct and indirect energy band gap are in a thin layer of tin oxide doped with aluminum-fluorine-indium at a percentage of 85:15% for a temperature of 200 0C, namely 3.36 and 3.51 eV. These results indicate that the resulting energy band gap decreases with increasing doping concentration and sintering temperature. Based on the optical properties obtained, the thin layer can be used as the basic material for semiconductors in electronic devices.

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“…Many methods have been adopted to grow CdO films such as spray pyrolysis, sputtering, pulsed laser deposition, metal organic chemical vapor deposition (MOCVD), sol–gel, , etc. Cadmium-containing thin films are used in a wide (large) variety of applications such as photovoltaic active layers, gas sensors, and others. , The extensive use of TCOs as transparent electrodes in many advanced technology applications has led to intense investigations of their physical, chemical, and optoelectronic nature.…”

Section: Introductionmentioning

confidence: 99%

“…Many methods have been adopted to grow CdO films such as spray pyrolysis, 3 sputtering, 4 pulsed laser deposition, 5 metal organic chemical vapor deposition (MOCVD), 6 sol−gel, 7,8 etc. Cadmium-containing thin films are used in a wide (large) variety of applications such as photovoltaic active layers, 9 gas sensors, 10 and others.…”

Section: Introductionmentioning

confidence: 99%

Short-Period CdO/MgO Superlattices as Cubic CdMgO Quasi-Alloys

Przeździecka

Wierzbicka

Dłużewski

et al. 2020

Crystal Growth & Design

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New perspective cubic quasi-alloy {CdO/MgO} m short-period superlattices (SLs) were grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The quality of crystals was characterized using high resolution X-ray diffraction and transmission electron microscopy (TEM) techniques. X-ray diffraction confirmed the cubic structure of the samples and the presence of peaks corresponding to the SLs with period ranging from 0.6 to 5 nm. Reciprocal space maps around the (200) and (412) Bragg reflections were collected to analyze the strain in the SLs layers with very high precision. Local lattice parameters were measured by digital processing of experimental HRTEM images. From TEM and small-angle X-ray, thicknesses and growth rates of individual layers of MgO and CdO have been extracted. We found that thicknesses of the CdO and MgO layers influence the measured band gap. Surface roughness parameters for SLs were obtained by both small-angle X-ray diffraction and atomic force microscopy study.

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Cadmium Oxide:Titanium Dioxide Composite Based Photosensitive Diode

Cited by 29 publications

References 48 publications

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

Short-Period CdO/MgO Superlattices as Cubic CdMgO Quasi-Alloys

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Cadmium Oxide:Titanium Dioxide Composite Based Photosensitive Diode

Cited by 29 publications

References 48 publications

The Optoelectrical Properties of Li: TiO2/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO2/p‐Si Photodiodes for Various Li Doping

Analysis of the Energy Band Gap of Tin Oxide Thin Layers as Semiconductor Base Materials in Electronic Devices

Short-Period CdO/MgO Superlattices as Cubic CdMgO Quasi-Alloys

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The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping