Calcium incorporated copper indium oxide thin films - a promising candidate for transparent electronic applications

Synthesis and Characterization of Radio-Frequency-Sputtered Delafossite Copper Indium Oxide (CuInO2) Thin Films

“…The In-3d doublet appeared to be upshifted by 0.3 eV and 0.2 eV from the elemental positions of In 3d 3/2 and In 3d 5/2 at 443.8 eV and 451.4 eV respectively. 43,53,54 Moreover, the absence of any shoulder peaks or nonappearance of a split in the In peaks, indicated that In is bonded to only oxygen and there is an absence of Cu-In bonding. This characteristic nature of In is usually observed in the CuInO 2 crystal structure.…”

“…This means that doping with Sn will give an ntype conductive film (Sn-doped CuInO 2 ) and at the same time, doping with Ca produces a p-type conductive film (Ca-doped CuInO 2 ). 42,43 Moreover, CuInO 2 depicts the highest optical band gap in the Cu-based delafossite family (>3.6 eV). [43][44][45][46][47] Hence CuInO 2 -based delafossite film was chosen as the material of interest for this work.…”

“…42,43 Moreover, CuInO 2 depicts the highest optical band gap in the Cu-based delafossite family (>3.6 eV). [43][44][45][46][47] Hence CuInO 2 -based delafossite film was chosen as the material of interest for this work.…”

“…The low-temperature post-deposition annealing of the films deposited on glass substrates in this research work demonstrated the inexpensive route to obtain CuInO 2 as compared to the previous works. 43,[45][46][47] Experimental Deposition of CuInO 2 thin films.-The radio frequency (RF) magnetron sputtering technique was adopted for the deposition of copper indium oxide thin films. The films analyzed in this study were deposited using AJA international ultra-high vacuum three-gun gun sputtering equipment.…”

Effect of N-doping on Structure and Properties of 3R-CuInO2 Oxide by First-principles Study

“…Unfortunately, the conductivity of CuInO2 thin film still cannot meet the application requirements, and doping is considered to be an effective way to solve this problem [14]. So far, the studies on doping of 3R-CuInO2 are mainly on the replace of In by Sn,B, Ca, Mg, Mn elements [5,12,13,[15][16][17][18][19], and the substitution doping of O position has been rarely studied. Thus in this paper, the effect of O-site doping by N element on the structure, electronic and mechanical properties of 3R-CuInO2 is investigated through the first-principles density functional theory.…”