Calculated Spin-Orbit Splittings of Some Group IV, III-V, and II-VI Semiconductors

Wepfer, G. G.; Collins, T. C.; Euwema, R. N.

doi:10.1103/physrevb.4.1296

Cited by 86 publications

(17 citation statements)

References 23 publications

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“…The third approximation (iii) is straightforward, since the energy-separated third split-off band a t k = 0 is usually shown t o be lower in energy of an amount of the order of 0.5 eV with respect to the other two bands [13], and then it plays a minor role in transport properties.…”

Section: Valence Bandmentioning

confidence: 99%

Hole Transport in Polar Semiconductors

Costato

Jacoboni

Reggiani

1972

Physica Status Solidi (b)

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The transport properties of holes in cubic semiconductors have been studied with a Monte Carlo technique taking into account polar scattering within and between the two valence bands degenerate at k = 0. The predominant p-like symmetry of the valence band wave functions has been found to enhance the polar ohmic mobility of about a factor two with respect to the case in which i t is neglected. The comparison between theoretical results and experimental data evidences the dominant importance of polar scattering mechanism for a typical 11-VI compound (CdTe) in the region of temperatures between 100 and 400 O K .On the contrary, this scattering mechanism alone cannot explain the low field transport of a typical 111-V compound (GaAs) in the same temperature range, according to its lower ionicity.

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Section: Valence Bandmentioning

confidence: 99%

Hole Transport in Polar Semiconductors

Costato

Jacoboni

Reggiani

1972

Physica Status Solidi (b)

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“…The electronic structure of III-V semiconductors has attracted considerable attention of researchers for many years [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. These compounds play an important role in microelectronics, for example, in development of light-emitting diodes and high-frequency low-noise devices for cellular telephones and advanced materials for spintronics.…”

Section: Introductionmentioning

confidence: 99%

Electronic Properties of III – V Semiconductors

Khanin

Kulkova

2005

Russ Phys J

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kova UDC 621.315.592The electronic structure of a series of III-V zinc-blende semiconductors is calculated by the full-potential linearized augmented-plane-wave method, using different exchange-correlation potential approximations. The calculated equilibrium lattice parameters and bulk moduli are shown to agree well with experiment, the band gap being acutely sensitive to the choice of the exchange-correlation potential approximation.

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“…The recreated energy levels at the band gap at G point with considering SO interactions closely corresponds to the absorption peaks of split excitons and others found in the absorption spectra for LaCuOCh. Table 1 summarizes the SO splitting energies in LaCuOCh obtained from this study with that reported for chalcopyrites CuGaCh 2 ; CuInCh 2 and free chalcogen ions [12,13]. The SO splitting energies of LaCuOCh and chalcopyrites are much reduced as compared with that of chalcogen ions.…”

Section: Resultsmentioning

confidence: 72%