Hybrid switch (HyS) consisting of Si IGBT and SiC MOSFET becomes increasingly popular due to its prominent advantages of low power loss and cost in clear energy era. However, the existing studies suffer from the current measurement methods due to the insertion inductance and inductive signal overshoot, which may lead to inaccurate measurements of loss, electrical stress and also limited performance of HyS at high switching frequencies. This paper conducts an in-depth study on the impact of inner loop inductance on HyS turn-off process. And an accurate current measurement method is proposed for high frequency HyS test and application, showing significant improvement in insertion inductance level and highbandwidth accuracy.