Calculation of band structure of the strained germanium nanofilm, doped with a donor impurity

Luniov, S. V.

doi:10.1016/j.physe.2020.113954

Cited by 6 publications

(4 citation statements)

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“…The hole mobility due to the presence of internal mechanical strains increases at room temperature by more than 1.5 times for nanofilms of d > 50 nm thickness. As shown in [17,19], the valence band of heavy holes tops the energy spectrum of the strained Ge/Ge(0.9)Si(0.1) nanofilm. Redistribution of holes with various effective mass between the bands of light and heavy holes due to temperature variation leads to changes in the effective mobilityof holes.…”

Section: Resultsmentioning

confidence: 96%

“…For the case of non-degenerate gas of current carriers, the electron concentrations in L1 and Δ1 minima of the conduction band, light and heavy holes of the valence band of the strained Ge nanofilm are expressed as [16,17]:…”

Section: Theory and Computational Detailsmentioning

confidence: 99%

“…In this paper, we consider the most general case of the effect of different structures of the conduction band and the valence band on the electrical properties of a strained germanium nanofilm at various temperatures. It was calculated in [17] for germanium nanofilm grown on a Ge(x)Si(1-x) (001) substrate that the energy positions of L1 and Δ1 minima will be the same for x = 0.64.The conduction band of the nanofilm will then be formed by both L1 and Δ1 minima. For the cases of x = 0 and x = 0.9, the lowest minima on the energy scale are Δ1 and L1, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…Computer algebra software system MathCad 14, in particular the built-in formula editor, was used in the calculations. The software enablesautomatic calculations using appropriate numerical methods and algorithms [17].…”

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Electrical properties of strained germanium nanofilm

Luniov

Nazarchuk

Burban

2021

Phys. Chem. Solid St.

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Dependences of the concentration of intrinsic current carriers, electron and hole mobilities and specific conductivity for strained germanium nanofilms grown on the Si, Ge(0,64)Si(0,36) and Ge(0,9)Si(0,1) substrates with crystallographic orientation (001), on their thickness at different temperatures were calculated on the basis of the statistics of non-degenerate two-dimensional electron and hole gas in semiconductors. The electrical properties of such nanofilms are determined by the peculiarities of their band structure. It is established that the effects of dimensional quantization, the probability of which increases with decreasing temperature, become significant for germanium nanofilms with the thickness of d<7 nm. The presence of such effects explains the significant increase in the specific conductivity and the decrease in the intrinsic concentration of current carriers for these nanofilms. The electron and hole mobility in the investigated germanium nanofilms is lower in relation to such unstrained nanofilms. Only for the strained germanium nanofilm with the thickness of d> 50 nm grown on the Ge(0,9)Si(0,1) substrate, an increase in the hole mobility at room temperature of more than 1.5 times was obtained. The obtained results of the electrical properties of strained germanium nanofilms can be used in producing on their basis new elements of nanoelectronic.

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Section: Resultsmentioning

confidence: 96%

Section: Theory and Computational Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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