Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1)

Liu, XueFei; Luo, Zhijun; Zhou, Xun; Wei, Jiemin; Wang, Yi; Guo, Xiang; Lang, QiZhi; Ding, Zhao

doi:10.1016/j.commatsci.2018.07.009

Cited by 2 publications

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“…where ε 1 and ε 2 are real and imaginary parts of the dielectric function, respectively, and n and k are refractive index and extinction coefficient, respectively. In x Ga 1−x N alloys are direct bandgap semiconductor materials, therefore, the dielectric function and absorption parameter α(ω) can be derived using the definition of the direct transition probability and the Kramers-Kronig relationship [42][43][44].…”

Section: Optical Propertiesmentioning

confidence: 99%

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

et al. 2020

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In this paper, the structure and photoelectric characteristics of zincblende InxGa1−xN alloys are systematically calculated and analyzed based on the density functional theory, including the lattice constant, band structure, distribution of electronic states, dielectric function, and absorption coefficient. The calculation results show that with the increase in x, the lattice constants and the supercell volume increase, whereas the bandgap tends to decrease, and InxGa1−xN alloys are direct band gap semiconductor materials. In addition, the imaginary part of the dielectric function and the absorption coefficient are found to redshift with the increase in indium composition, expanding the absorption range of visible light. By analyzing the lattice constants, polarization characteristics, and photoelectric properties of the InxGa1−xN systems, it is observed that zincblende InxGa1−xN can be used as an alternative material to replace the channel layer of wurtzite InxGa1−xN heterojunction high electron mobility transistor (HEMT) devices to achieve the manufacture of HEMT devices with higher power and higher frequency. In addition, it also provides a theoretical reference for the practical application of InxGa1−xN systems in optoelectronic devices.

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Section: Optical Propertiesmentioning

confidence: 99%

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

et al. 2020

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The effect of biaxial tensile strain on structure and photoelectric properties of Fe-doped GaN monolayer

Song

Ding

Liu

et al. 2021

Computational Materials Science

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Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1)

Cited by 2 publications

References 27 publications

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

The effect of biaxial tensile strain on structure and photoelectric properties of Fe-doped GaN monolayer

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Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1)

Cited by 2 publications

References 27 publications

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation

The effect of biaxial tensile strain on structure and photoelectric properties of Fe-doped GaN monolayer

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Calculation of electronic and optical properties of surface InxGa1−xP and indium-gradient structure on GaP (0 0 1)