Calculation of electronic and optical properties of Zn-based II–VI semiconductors

Bechiri, Abderrachid; Benmakhlouf, F.; Bouarissa, N.

doi:10.1016/j.phpro.2009.11.028

Cited by 16 publications

(6 citation statements)

References 40 publications

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“…This antisymmetric gap was offered as a qualitative measurement of the ionicity of the crystal. 50 Figure 3 shows the polarity and the ionicity of the CdTe and ZnTe as a function of pressure. It can be noticed that the ionicity and polarity are slightly increased with increasing pressure.…”

Section: Resultsmentioning

confidence: 99%

Sound Velocity, Electronic, Optical, and Mechanical Properties for Nano Semiconductor Materials (CdTe, ZnTe) under the Influence of Pressure

Maaitah

Elkenany

2022

ECS J. Solid State Sci. Technol.

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The energy band structure, energy band gaps, refractive index, high-frequency dielectric constant, static dielectric constant, reflectivity, and susceptibility for CdTe and ZnTe have been determined. The elastic parameters, Young’s, bulk, shear moduli, Poisson ratio, anisotropic factor, and the internal strain parameter have been calculated for the CdTe and ZnTe. The acoustic velocity in the directions [001], [110], and [111] has been determined for the studied compounds. The pressure dependence of the investigated properties has been studied. The empirical pseudopotential method (EPM) was used to calculate our results. Our results at high values of pressure could be taken as a reference for future experimental and theoretical works. Generally, our results are found to be in good accord with experimental and theoretical data published in the literature. The data gained in this study could be useful in the development of optoelectronic devices under high values of pressure.

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Section: Resultsmentioning

confidence: 99%

Sound Velocity, Electronic, Optical, and Mechanical Properties for Nano Semiconductor Materials (CdTe, ZnTe) under the Influence of Pressure

Maaitah

Elkenany

2022

ECS J. Solid State Sci. Technol.

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“…Decreasing amounts of selenium and sulfur in the untreated (C/S/S/S) and chloride-treated (C/S/S/S-Cl) QDs from 37.8 to 34.1% elemental molar percentage from 10.9 to 10.3% were obtained, respectively. The amount of sulfur lost is less compared to selenium due to the stronger ionic character of the ZnS bond . Finally, 1-octanol was added and annealed at 180 °C for 30 min.…”

Section: Resultsmentioning

confidence: 99%

Importance of Surface Functionalization and Purification for Narrow FWHM and Bright Green-Emitting InP Core–Multishell Quantum Dots via a Two-Step Growth Process

et al. 2021

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Indium phosphide (InP)-based quantum dots (QDs) are widely studied as environmentally friendly light emitters for display applications. However, the synthesis of InP QDs with optical properties that meet high color quality as comparable with cadmium (Cd)- and lead (Pb)-based QDs is challenging. In this article, we present the synthesis of surface-modified bright green luminescence InP core–shell quantum dots (CS-QDs) with the narrowest full width at half-maximum (fwhm) of 33 nm, absolute quantum yield (QY) of 71%, and an absorption spectra valley/depth (V/D) ratio of 0.61 after a size selection purification process. Our approach first emphasizes the heating temperatures for InP growth and second on the importance of surface stabilization of this system. We developed a two-step heating-up process to grow In(Zn)P core and coated inorganic shell with ZnSe/ZnSeS/ZnS composition. In situ surface treatment with zinc chloride (ZnCl2) and 1-octanol was carried out to enhance the PLQY and improve the surface passivation of the CS-QDs. Optical spectroscopy and surface characterization techniques including nuclear magnetic resonance (NMR), X-ray photoelectron spectroscopy (XPS), and infrared (IR) spectroscopy were used to analyze the properties of the CS-QDs. We suggest that this work motivates future development and optimization of surface chemistry of InP CS-QDs to enable the full access and realization of their luminescence efficiency in high-color-quality cadmium (Cd)-free displays.

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“…As previously stated, the current material product is composed mainly of heterojunction multicomponentes, such as MoS 2 and MoO 3 having band gap values of (1.2-1.9 eV) [64] and (2.8-3.2 eV) [65][66][67], respectively, in addition to Zn metallic element. The photocatalytic activity strongly depends on the band gap arrangement of distincit semiconductor [68][69][70][71] due to its role in electron-hole separation capability.…”

Section: Photocatalytic Activity Under Vis Light Irradiationmentioning

confidence: 91%

Enhancing the MoS₂/MoO₃/ZnS/Zn-Heterojunction catalyst's photocatalytic performance for water organic pollutants

et al. 2023

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Pure and lightly Zn-doped MoS2 powdered samples have been prepared, structurally analysed by XRD, FTIR, XPS, SEM& EDX, and optically characterised using optical diffuse reflectance spectroscopy as catalytic materials for organic pollutions degradation. Zn – doping has lowered the energy gap from 1.2 eV for MoS2 to 0.9 eV.The heat-treated Zn: MoS2 product revealed different multi-heterojunction semiconducting MoS2, MoO3 and ZnS components and metal-Zn element with different optical characteristics, which are beneficial for photocatalytic activity enhancement. MoS2 and Zn: MoS2 catalysts for MB-dye photodegradation were experienced under dark, UV, and VIS irradiations assisted by PH and/or ultrasonic piezoelectric potential to improve the efficiency of photodegradation activity. The current enhanced result of 99.3% efficiency and a high performance figure of merit value was achieved in 20 seconds with the capability of reusability.

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Calculation of electronic and optical properties of Zn-based II–VI semiconductors

Cited by 16 publications

References 40 publications

Sound Velocity, Electronic, Optical, and Mechanical Properties for Nano Semiconductor Materials (CdTe, ZnTe) under the Influence of Pressure

Sound Velocity, Electronic, Optical, and Mechanical Properties for Nano Semiconductor Materials (CdTe, ZnTe) under the Influence of Pressure

Importance of Surface Functionalization and Purification for Narrow FWHM and Bright Green-Emitting InP Core–Multishell Quantum Dots via a Two-Step Growth Process

Enhancing the MoS₂/MoO₃/ZnS/Zn-Heterojunction catalyst's photocatalytic performance for water organic pollutants

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Calculation of electronic and optical properties of Zn-based II–VI semiconductors

Cited by 16 publications

References 40 publications

Sound Velocity, Electronic, Optical, and Mechanical Properties for Nano Semiconductor Materials (CdTe, ZnTe) under the Influence of Pressure

Sound Velocity, Electronic, Optical, and Mechanical Properties for Nano Semiconductor Materials (CdTe, ZnTe) under the Influence of Pressure

Importance of Surface Functionalization and Purification for Narrow FWHM and Bright Green-Emitting InP Core–Multishell Quantum Dots via a Two-Step Growth Process

Enhancing the MoS2/MoO3/ZnS/Zn-Heterojunction catalyst's photocatalytic performance for water organic pollutants

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Enhancing the MoS₂/MoO₃/ZnS/Zn-Heterojunction catalyst's photocatalytic performance for water organic pollutants