Calculation of Neutron-Induced Defect Clusters in Silicon and Comparison with TEM Investigations

Gessner, T.; Pasemann, M.; Schmidt, Brigitte F.

doi:10.1002/pssa.2210770116

Cited by 7 publications

(3 citation statements)

References 11 publications

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“…13 These subcascades then cool down rapidly to form amorphous pockets in the lattice. The existence of these inclusions has been confirmed experimentally [14][15][16][17][18][19][20][21][22] and their formation kinetics has been described by MD simulations. 13,23,24 Fully amorphous Si has been studied computationally to a great extent, [25][26][27][28][29][30] and much research has been done on isolated point defects in Si, 31 but amorphous clusters of defects surrounded by a crystalline lattice constitute a novel case that has not been studied with ab initio methods previously.…”

Section: Methodsmentioning

confidence: 59%

Amorphous defect clusters of pure Si and type inversion in Si detectors

2010

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Si detectors subjected to energetic particle bombardment are known to undergo a deleterious type inversion from n type to p type. The effect is due to defects that trap electrons but the identity of the main responsible traps remains unknown. Using a combination of classical molecular-dynamics simulations and large-scale density-functional theory calculations, we show that amorphous defect clusters formed under particle bombardment are strong acceptors of electrons and may as such well explain the phenomenon.

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Section: Methodsmentioning

confidence: 59%

Amorphous defect clusters of pure Si and type inversion in Si detectors

2010

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“…The defect clusters are enriched by divacancies (~ 10 20 cm -3 ) and their structure is still crystalline silicon [14], as IR absorption and properties of divacancies annealing are not changed. High resolution TEM-investigations [15] is shown that agglomeration of interstitial atoms was not observed and the optical diffractogram taken from the defected area clearly shows the amorphous structure. In our opinion, it is possible a diffusion of interstitial atoms to the surface of silicon because of the small thickness of the region investigated (~10 nm) is a reason of amorphous regions forming.…”

Section: Theorymentioning

confidence: 95%

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

Dolgolenko¹

2004

Semicond. Phys. Quantum Electron. Optoelectron.

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Silicon n-type samples with resistivity ~2.5⋅10 3 Ohm⋅cm grown by the method of a floating-zone in vacuum (FZ), in argon atmosphere (Ar) and received by the method of transmutation doping (NTD) are investigated before and after irradiation by various doses of fastpile neutrons at room temperature. The radiation hardness of n-type silicon is shown to be determined first of all by the introduction rate of defect clusters and their parameters and then by the introduction rate of defects into the conducting n-Si matrix. The presence of oxygen, argon atoms and A-type defects (dislocation loops of the interstitial type) mainly increases the radiation hardness of n-Si. The effective concentration of carriers in irradiated silicon was calculated in the framework of Gossicks model taking into account the recharges of defects both in the conducting matrix of n-Si and in the space-charge regions of defect clusters. Grown by the method of the floating-zone melting in argon atmosphere the neutron-transmutation-doped silicon (NTD) has elevated radiation hardness. The introduction rate of divacancies in the conducting matrix of n-Si (NTD) is about five times less than in n-Si (FZ) and ~2 times less than in n-Si (Ar). The availability of the deformation strain field surrounding the argon-type impurities as well as A-type defects is supposed to promote the annihilation of divacancies with interstitial atoms of silicon.

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“…The defect clusters are enriched by divacancies (~10 20 cm -3 ) and their structure is still crystalline silicon [15], as IR absorption and properties of divacancy annealing are not changed. High-resolution TEM investigations [16] have shown that an agglomeration of interstitial atoms was not observed and the optical diffractogram taken from the defected area clearly shows the amorphous structure. It is possible a diffusion of interstitial atoms to the surface of silicon because of the small thickness of the region investigated (~10 nm) is the reason for amorphous regions forming.…”

Section: Theorymentioning

confidence: 96%

Energy‐level position of bistable (C_iC_s)⁰ defect in the B configuration in the forbidden band of n‐Si

Dolgolenko

Varentsov

Гайдар³

2004

Physica Status Solidi (b)

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Phosphorus‐doped silicon samples grown by various methods after irradiation by fast neutrons of a WWR‐M reactor and subsequent annealing at room temperature were investigated. The calculation of the temperature dependence of effective carrier concentration was carried out in the framework of Gossick's model, taking into account the recharges of defects both in the conducting matrix of n‐Si and in the space charge region of defect clusters. The distribution function of electrons in the acceptor level of bistable defect (CiCs)0 was determined in the case when the concentration of this defect is a function of the Fermi level in the conducting matrix of n‐Si. The concentration of bistable CiCs defect and its energy level at (Ec – 0.123 eV) in the forbidden band of silicon were calculated. The absence of reconciliation between the introduction rate of A‐centers in n‐Si, irradiated by fast neutrons of the reactor, and the concentration of oxygen in 1016–1018 cm–3 limits was determined. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Calculation of Neutron-Induced Defect Clusters in Silicon and Comparison with TEM Investigations

Cited by 7 publications

References 11 publications

Amorphous defect clusters of pure Si and type inversion in Si detectors

Amorphous defect clusters of pure Si and type inversion in Si detectors

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

Energy‐level position of bistable (C_iC_s)⁰ defect in the B configuration in the forbidden band of n‐Si

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Calculation of Neutron-Induced Defect Clusters in Silicon and Comparison with TEM Investigations

Cited by 7 publications

References 11 publications

Amorphous defect clusters of pure Si and type inversion in Si detectors

Amorphous defect clusters of pure Si and type inversion in Si detectors

Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons

Energy‐level position of bistable (CiCs)0 defect in the B configuration in the forbidden band of n‐Si

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Energy‐level position of bistable (C_iC_s)⁰ defect in the B configuration in the forbidden band of n‐Si