Calculation of semiconductor band bending due to a superficial zone including electronic states: Application to Schottky diodes

Palau, J.M.; Dumas, M.

doi:10.1016/0040-6090(90)90270-n

Cited by 7 publications

(14 citation statements)

References 39 publications

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“…By and large the calculation procedure of V(x) is similar to that proposed in [17]. The value of V 1 (x) at a certain point x 1 (Fig.…”

Section: An Intimate Metal-semiconductor Contact With Discrete Nsss Imentioning

confidence: 98%

“…We proceed from the model of intimate contact, where the Fermi-level pinning is related to discrete electron states (hereinafter referred to as nearsurface states (NSSs)) in equilibrium with the semiconductor and penetrating deep into the latter [17]. It is in this case where a strong effect of the NSSs on the MSSBC characteristics leading to different distortions can be expected, in contrast to the models discussed in [9,18] …”

Section: Introductionmentioning

confidence: 95%

“…Variations of the discrete NSS density with the distance from the surface are given by the standard dependences [17] as…”

Section: An Intimate Metal-semiconductor Contact With Discrete Nsss Imentioning

confidence: 99%

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A model of the intimate metal-semiconductor Schottky-barrier contact

Bozhkov

Zaitsev

2005

Russ Phys J

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On the basis of numerical analysis, a model of the intimate metal-semiconductor Schottky-barrier (SB) contact is proposed. According to this model, the Fermi-level pinning at the contact is due to high density of electron surface states in equilibrium with the metal, whereas the IV characteristic distortions (deviation from ideality) are due to a continuous (and/or discrete) spectrum of the energy-and coordinate distributed (in the general case) nearsurface states in equilibrium with the semiconductor. This model amplifies the Bardeen model for actual SB contacts that is limited by the assumption of the presence of an intermediate insulating layer. However, the assumption is not necessarily fulfilled for the contacts manufactured using currently available technologies.

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“…By and large the calculation procedure of V(x) is similar to that proposed in [17]. The value of V 1 (x) at a certain point x 1 (Fig.…”

Section: An Intimate Metal-semiconductor Contact With Discrete Nsss Imentioning

confidence: 98%

Section: Introductionmentioning

confidence: 95%

See 1 more Smart Citation

A model of the intimate metal-semiconductor Schottky-barrier contact

Bozhkov

Zaitsev

2005

Russ Phys J

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“…В то же время известно, что концентрация поверхностных со-стояний убывает в глубь полупроводника по экспонен-циальному закону, с характерным параметром затуха-ния l s [2,3]. Согласно данным работ [4,5], типичное зна-чение l s в таких полупроводниках как кремний и арсенид галлия составляет 10 −7 см. Поэтому в случае, когда тол-щина области пространственного заряда (ОПЗ) w стано-вится порядка или меньше l s , следует ожидать, что при-ближение δ-функции будет несправедливым, а уравнение Пуассона нужно решать с учетом распределения поверх-ностных состояний по координате x. Именно в таком приближении была решена задача в настоящей работе.…”

Section: Introductionunclassified

Новый Механизм Реализации Омических Контактов

Саченко¹,

Беляев²,

Конакова³

2018

Физика И Техника Полупроводников

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Analysis of the contact-barrier height taking into account the distribution of surface states along coordinate x perpendicular to the insulator–semiconductor interface is performed for metal–semiconductor contacts with a dielectric gap. It is shown that taking into account the spatial dependence of the density of surface states at rather high semiconductor doping levels leads to a substantial decrease in the barrier height, which promotes the realization of ohmic contacts. It is established that the smaller the metal–semiconductor contact potential difference ϕ_ ms is, the stronger the effect of barrier-height lowering. If ϕ_ ms is negative, this effect can lead to potential sign reversal, i.e., to the realization of an enrichment layer in the space-charge region of the semiconductor even at a high density of surface states. This in turn promotes the manifestation of an anomalous dependence of the contact resistivity on temperature; the resistivity increases with an increase in temperature.

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“…At the same time, it is known that the concentration of surface states lowers when moving into the semiconductor depth according to an exponential law with the characteristic damping parameter l s [7,99]. According to the data [100,101], a typical value of l s for such semiconductors as Si and GaAs is 10 -7 cm. Therefore, when the SCR thickness w becomes by the order or smaller than l s , it should be noted that approximation of the δ-function will be invalid, and the Poisson equation should be solved taking into account the distribution of surface states along the coordinate x.…”

Section: Introductionmentioning

confidence: 99%

http://journal-spqeo.org.ua

Sachenko¹,

Конакова²,

Belyaev³

2018

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. This review is devoted to presentation and analysis of physical mechanisms of ohmic contacts formation in semiconductors. In addition to the classical mechanisms known for decades, new mechanisms for current flow in ohmic contacts researched for the recent decade are described. Used in this review were the original results of the authors, which they described earlier in various papers of recent years. Current flow through dislocations combined with metal shunts, realized, in particular, on the lapped semiconductor surface; detailed current flow mechanism in the presence of doping step and current flow through the heavily doped semiconductor surface charge states reduction should be noted among the new mechanisms of current flow. These current flow mechanisms are characterized by the presence of specific contact resistance growth with temperature increase in some temperature intervals and contacts ohmicity up to helium temperatures.

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Calculation of semiconductor band bending due to a superficial zone including electronic states: Application to Schottky diodes

Cited by 7 publications

References 39 publications

A model of the intimate metal-semiconductor Schottky-barrier contact

A model of the intimate metal-semiconductor Schottky-barrier contact

Новый Механизм Реализации Омических Контактов

http://journal-spqeo.org.ua

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