Calculation of single event burnout failure rate for high voltage devices under satellite orbit without fitting parameters

Altitude dependent failure rate calculation for high power semiconductor devices in aviation electronics

“…The failure rate in high power devices due to space protons 31) calculated using the proposed method. The failure rate in high power semiconductor device due to terrestrial neutrons 33) is shown by conducting heavy ion simulation at different locations along the PiN diode using the proposed methodology by considering the neutron spectrum from gordon et al 35) The calculated failure rate compared with phenomenological expression proposed by Zeller 24) is shown in Fig. 2.…”

“…The extracted probability of charge deposition curves for different energies in silicon shown in Fig. 4 is considered from Sudo et al 33) These extracted curves are compared with the experimental data from P. Truscott et al 40) represent as dots in the figure.…”

“…The threshold charge for device destruction at different locations along the PiN diode is shown in Figs. 7 and 8 are considered from sudo et al 33) The threshold charge for the device destruction increases as the deposited charge is away from the PN junction because of decrease the electric field. The obtained critical charge for device destruction in 300 μm PiN diode shown in Fig.…”

“…30) In this paper, a decoupled failure rate calculation method is proposed for high power semiconductor devices applicable to any cosmic ray operating conditions such as terrestrial, airplane altitude and satellite orbit. [31][32][33][34] PiN diode is considered because of presence of PiN structure in all high voltage semiconductor devices. Threshold charge considered as failure criteria for device destruction.…”

“…In this paper, the altitude dependent failure rate in 100 and 300 μm PiN diode is shown due to the impact of neutron up to an altitude of 60 km. The failure cross section data for the 100 and 300 μm calculated using the proposed method is considered from sudo et al 33) in the present work. The neutron flux spectrum required for SEB failure rate calculation considered from EXPACS database.…”