The creep properties of silicon nitride containing 6 wt% yttria and 2 wt% alumina have been determined in the temperature range 1573 to 1673 K. The stress exponent, n, in the equation e « a , was determined to be 2.00 +_0.15 and the true activation energy was found to be 692 +_ 25 kJ mol~. Transmission electron microscopy studies showed that deformation occurred in the grain boundary glassy phase accompanied by microcrack formation and cavitation. The steady state creep results are consistent with a diffusion controlled creep mechanism involving nitrogen diffusion through the grain boundary glassy phase.