2010
DOI: 10.1007/s11051-010-9913-6
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Calculation of the quantum efficiency for the absorption on confinement levels in quantum dots

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Cited by 14 publications
(8 citation statements)
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“…(R s ∼ 1.0 × 10 4 AW −1 at 632 nm, D* ∼ 10 12 Jones) [40,41]. The spectral width of 450 nm to 1300 nm obtained from spectral investigations is in good agreement with the results reported in the literature [37,42,43,44] and with the results obtained from structural investigations, which reveal the presence of small Ge-NCs (∼ 5 nm).…”
Section: Accepted Manuscriptsupporting
confidence: 89%
“…(R s ∼ 1.0 × 10 4 AW −1 at 632 nm, D* ∼ 10 12 Jones) [40,41]. The spectral width of 450 nm to 1300 nm obtained from spectral investigations is in good agreement with the results reported in the literature [37,42,43,44] and with the results obtained from structural investigations, which reveal the presence of small Ge-NCs (∼ 5 nm).…”
Section: Accepted Manuscriptsupporting
confidence: 89%
“…SiO 2 , HfO 2 , Si 3 N 4 , Al 2 O 3 or TiO 2 ) which goes through the usual sequence of problems regarding reduction of the oxides, diffusion of Si and Ge in the oxide matrix, nucleation and growth, frequently followed by coarsening of nanocrystals due to Ostwald ripening 4,14 . In these films, the optical and electrical properties can be additionally managed by controlling the NC density and sizes that influences the carrier quantum confinement and in turn the materials properties [15][16][17] . Introducing SiGe NCs into oxides is beneficial for tuning the crystallization temperature, controlling the NCs size (in the case of multilayers) and minimizing the effects given by defects like recombination centers or fast leakage paths in SiGe-based films 4 .…”
mentioning
confidence: 99%
“…Structures with Ge-nps embedded into the SiO 2 layer exhibit a quite different spectral behavior. As a consequence, the Ge-nps confined in the SiO 2 matrix play a more important role in the measured broad photoresponsivity spectrum towards low energy (an effect which is amplified as the size of Ge-nps increase) [4244] compared to the traps formed at the interface between Ge-nps and the surrounding SiO 2 [45]. Such increased responsivity (leading to QE higher than 100%) were also observed and reported for other types of Si- or Ge-based structures [15].…”
Section: Resultsmentioning
confidence: 99%