Calculation of the quasi-Fermi levels and characteristics of spontaneous emission from heavily doped semiconductors

Abstract

A theoretical analysis is made of the dependence of the quasi-Fermi levels on the impurity concentration and nonequilibrium carrier density in heavily doped semiconductors. The influence of the degree of doping, pumping, and temperature on the behavior of the spontaneous emission is discussed. It is assumed that the conditions are of the kind encountered in semiconductor lasers.