Calculation of the thermodynamic properties of AIII nitrides

Sedmidubský, David; Leitner, J.

doi:10.1016/j.jcrysgro.2005.09.043

Cited by 14 publications

(19 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At very high temperatures the effect of thermal radiation within ceramics becomes important, becoming very significant above 1500 K [180]. At these very high temperatures the thermal conductivity can ap- [17]; Al 2 O 3 -3, review of alumina [170]; AlN-1, theoretical calculation for AlN [144]; AlN-2, theoretical calculation for AlN [171]; BeO-1, 99.6% pure BeO [172]; BeO-2, 99.96% pure BeO [173]; BeO-3, theoretical calculation for BeO [174]; BeO-4, beryllia [175]; F.Q.-1, review of vitreous silica [99]; F.Q.-2, review of vitreous silica [168]; Sialon-1, Kennametal TK4 sialon [100]; Sialon-2, 100 wt% β -sialon [78]; Sialon-3, 5 wt% α-, 95 wt% β -sialon [78]; Sialon-4, 20 wt% α-, 80 wt% β -sialon [78]; Si 3 N 4 -1, Ceradyne Ceralloy 147-31N silicon nitride [100]; Si 3 N 4 -2, Kyocera SN235P silicon nitride [100]; Si 3 N 4 -3, theoretical calculation for β -Si 3 N 4 [90].…”

Section: Thermal Conductivitymentioning

confidence: 99%

A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics

et al. 2011

View full text Add to dashboard Cite

The current review uses the material requirements of a new space propulsion device, the Variable Specific Impulse Magnetoplasma Rocket (VASIMR ® ) as a basis for presenting the temperature dependent properties of a range of dielectric ceramics, but data presented could be used in the engineering design of any ceramic component with complementary material requirements. A material is required for the gas containment tube (GCT) of VASIMR ® to allow it to operate at higher power levels. The GCT's operating conditions place severe constraints on the choice of material. A dielectric is required with a high thermal conductivity, low dielectric loss factor, and high thermal shock resistance. There is a lack of a representative set of temperature-dependent material property data for materials considered for this application and these are required for accurate thermo-structural modelling. This modelling would facilitate the selection of an optimum material for this component. The goal of this paper is to determine the best material property data values for use in the materials selection and design of such components. A review of both experimentally and theoretically-determined temperature-dependent & room temperature properties of several materials has been undertaken. Data extracted are presented by property. Properties reviewed are density, Young's, bulk and shear moduli, Poisson's ratio, tensile, flexural and compressive strength, thermal conductivity, specific heat capacity, thermal expansion coefficient and the factors affecting maximum service temperature. Materials reviewed are alumina, aluminium nitride, beryllia, fused quartz, sialon and silicon nitride.

show abstract

Section: Thermal Conductivitymentioning

confidence: 99%

A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics

et al. 2011

View full text Add to dashboard Cite

show abstract

“…This concerns not only the group of nitrides [24,[28][29][30], but also a variety of ternary materials [40][41][42]. Such improper C p (T) data simulations provided the main motivation for the completion of the present study.…”

mentioning

confidence: 99%

“…[23] and [24] for hexagonal AlN and GaN, respectively, the alternative use of a four-component hybrid model by the Leitner group [28][29][30] [17,18,[20][21][22][23][24]. This is due to the persistent use of Debye's highly specialized (fictitious) heat capacity model function [13] (see also Section 2 and the Appendix A of the present study 1 ), for approximating measured C p (T) dependences in the cryogenic region.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Representative hybrid model used for analyses of heat capacities of group‐IV, III–V, and II–VI materials

Pässler

2010

Physica Status Solidi (b)

View full text Add to dashboard Cite

Characteristic non-Debye features inherent to the dispersionrelated hybrid model, which had been devised for the sake of physically adequate representations of isobaric heat capacities of semiconductor and wide band gap materials, are demonstrated and discussed in some detail. We perform least-meansquare fittings of low-and high-temperature C p (T) data sets that are available for group-IV materials (diamond, Si, Ge, 3C-SiC), III-V materials (BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InP, InAs, InSb), and II-VI materials (ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe). The simulations of the C p (T) data sets under study, particularly with respect to the cryogenic region, are graphically represented, and existing data deficiencies are discussed. Important by-products of the fittings are presented within the frame of Supporting Information (online at: www.pss-b.com). There are given in tabulated form the characteristic phonon energies, e P (m), for integral orders, m ¼ À2, À1, 0, 1, 2, and 4, including further dispersion-related parameters like average phonon temperatures, Q P , dispersion coefficients, D P , and high-temperature limiting values of Debye temperatures, Q Dh (1). Furthermore, basing on comprehensive calculations of the C p (T) dependences from absolute zero up to room temperature, we provide representative values of entropies, S p (T), enthalpies, H p (T) À H p (0), and Gibbs free energies, G p (T) À G p (0), for the frequently considered reference point, T r ¼ 298.15 K, the accurate knowledge of which is indispensable for possible high-temperature continuations of these standard thermodynamic functions within the frame of the commonly used thermo-chemical formalism.

show abstract

“…This could act as the source of the secondary aluminum. Using Equation 2 with values for the heats of formation of D f H u (Al) (s) ¼ 325.85 kJ mol À1 , D f H u (N) 2(g) ¼ 0, and D f H u (AlN) (s) ¼ À 310.56 kJ mol À1 (at 298.15 K, 0.1 MPa), [15] the calculated heat of reaction for the formation of the aluminum nitride is then D r H u ¼ À 636.41 kJ mol À1 .…”

mentioning

confidence: 99%

Formation of Aluminum Nitride Coatings at Low Temperature

Adaszko¹,

Sercombe²

2010

Adv Eng Mater

View full text Add to dashboard Cite

A method has been developed that produces an AlN coating on an aluminum substrate at 540 °C. It builds on the techniques previously reported (D. Kent, G. B. Schaffer, T. B. Sercombe, J. Drennan, Scripta Mater. 2006, 54, 2125), but uses aluminum powder which reduced the reaction time and required less stringent atmosphere control. Initially, the nitride formed as a shell round the particles and was accompanied by the filling of the interstitial pores by a secondary aluminum. At longer times, both the powder and the secondary aluminum nitrided, resulting in a relatively dense coating.

show abstract

Calculation of the thermodynamic properties of AIII nitrides

Cited by 14 publications

References 28 publications

A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics

A review of the processing, composition, and temperature-dependent mechanical and thermal properties of dielectric technical ceramics

Representative hybrid model used for analyses of heat capacities of group‐IV, III–V, and II–VI materials

Formation of Aluminum Nitride Coatings at Low Temperature

Contact Info

Product

Resources

About