Calculation of thermal parameters of SiGe microbolometers

Abstract

The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the values found experimentally and range between 2x10$^-7$ and 7x10$^-8$ W/K and 1.5 and 4.5 ms, respectively. High sensitivity of microbolometer is achieved due to optimization of the thermal response time and thermal conduction by fitting the geometry of supporting heat-removing legs or by selection of a suitable material providing boundary thermal resistance higher than 8x10$^-3$ cm$^2$K/W at the SiGe interface.Comment: 11 pages, 6 figure

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

“…Schottky barriers were formed on commercial single-crystalline Czochralski-grown silicon wafers ( ρ =12 Ω cm, (100), p-type) coated by about 600-nm-thick layer of SiO 2 formed by thermal oxidation and about 180-nm-thick layer of pyrolytic Si 3 N 4 (the dielectric layers simulated a design of the supporting membranes of the previously tested bolometer cells [10,13,14]). Films of polycrystalline Si 〈 P 〉 with the thicknesses of about 150 nm were deposited by thermal decomposition of monosilane at the substrate temperature T s ≈620℃; then they were doped with phosphorus by ion implantation ( E = 35 keV) to the dose of 5×10 15 cm −2 and annealed at 700℃ for 30 min.…”