Calculation of thermodynamic properties and transport coefficients of Ar / N 2

Abstract

The composition, thermodynamic properties and transport coefficients of Ar-H2-Si and N2-H2-Si plasma within a temperature range of 300-30,000 K and pressure range of 0.1-10 atm are calculated under the assumptions of local thermal equilibrium (LTE) and local chemical equilibrium (LCE). Taking Debye-Hückel corrections into account, the chemical equilibrium composition and thermodynamic properties of these two plasma systems are derived using the mass action law and classical statistical thermodynamics respectively. The transport coefficients, including viscosity, conductivity, and thermal conductivity, are calculated using the Chapman-Enskog (C-E) method extended to a third-order approximation (second-order for viscosity and heavy particle translational thermal conductivity). Some of the results have been compared with those of other researchers, and there is a good level of agreement. The slight difference arises from the selection of interaction potential. The final calculation reveals that the introduction of silicon vapor significantly alters the thermodynamic properties and transport coefficients of Ar⁄N2-H2-Si plasma, even at a small concentration of silicon vapor (1%), the effect on the electrical conductivity can not be ignored. Furthermore, our calculation results provide the fundamental data for numerical simulations of magnetohydrodynamics (MHD) for the synthesis of silicon nanoparticles and silicon composites.