Calculations of electron inelastic mean free paths

Tanuma, Shigeo; Powell, C. J.; Penn, David R.

doi:10.1002/sia.1997

Cited by 424 publications

(497 citation statements)

References 31 publications

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“…To study the influence of different oxidation times, a second sample series was produced. The samples of this second set also consists of a 13 nm thick Al layer, but oxidized for different periods of time (10,30, 60, 600 s) by the ECR plasma source with constant source parameters. Afterwards, all samples were covered with a 2 nm thick Co layer to protect the oxidized Al layer from the atmosphere.…”

Section: Methodsmentioning

confidence: 99%

Quantitative ARXPS investigation of systems with ultrathin aluminium oxide layers

Kozłowska

Reiche

Oswald

et al. 2004

Surface & Interface Analysis

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Angle-resolved x-ray photoelectron spectroscopy (ARXPS) is a non-destructive method to investigate the near-surface structure of specimens with a flat surface. For interpretation of the electron intensities emitted from different depth regions, model calculations are necessary. Based on an earlier algorithm we have developed a program for ARXPS studies of thin multilayers.In our model calculation the sample structure is treated as consisting of several layers (one to three) on the substrate, whereas the top layer can be incomplete. Emitted electrons are assumed to be attenuated exponentially in the layers. Different atomic volumes, electron attenuation lengths (including consideration of elastic scattering) and assumptions on stoichiometry are taken into account for the particular layers.As an application of our model calculations we present a study of a set of Al samples that were oxidized by different methods, i.e. natural and plasma oxidation (plasma obtained by electron cyclotron resonance). The oxide layers produced by plasma oxidation were protected by a 2 nm thick Co film, before exposing the samples to the air. Additionally, in order to check our results of the ARXPS model calculation, x-ray reflectometry (XRR) analysis was used.

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Section: Methodsmentioning

confidence: 99%

Quantitative ARXPS investigation of systems with ultrathin aluminium oxide layers

Kozłowska

Reiche

Oswald

et al. 2004

Surface & Interface Analysis

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“…The uncertainty of the calculated EAL values is estimated by the authors of the software to be ³20%. 22 The validity of the TPP-2M predictive formula and SRD-82 EAL calculations has been established for photoelectrons with KE > 200 eV, 22,24 and has been recently extended down to KE > 50 eV for elemental solids, 26 but for the As 2p 3/2 photoelectrons (KE ³ 160 eV) in InAs there could be some effects unaccounted for in the model.…”

Section: Appendix: Eal Calculationsmentioning

confidence: 99%

Quantification of discrete oxide and sulfur layers on sulfur‐passivated InAs by XPS

Petrovykh

Sullivan

Whitman

2005

Surface & Interface Analysis

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The initial quality and stability in air of InAs(001) surfaces passivated by a weakly-basic solution of thioacetamide (CH 3 CSNH 2 ) is examined by XPS. The S-passivated InAs(001) surface can be modeled as a sulfur-indium-arsenic 'layer-cake' structure, such that characterization requires quantification of both arsenic oxide and sulfur layers that are at most a few monolayers thick. This thickness range complicates the quantitative analysis because neither standard submonolayer nor thick-film models are applicable. Therefore, we develop a discrete-layer model and validate it with angle-resolved XPS data and electron attenuation length (EAL) calculations. We then apply this model to empirically quantify the arsenic oxide and sulfur coverage on the basis of the corresponding XPS intensity ratios.

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“…Nevertheless, a peak centered at 2.1 eV is seen in CoO. The intensity analysis 30 performed by including the ionization cross-sections, 29 electron inelastic mean free paths 31 , and electron emission geometry reveals that, in grazing geometry, the TM 3d contribution dominates the VB spectra. For FeO and CoO films the TM 3d/Pt 5d intensity ratios are estimated to be 16.2 and 21.6, respectively.…”

Section: Leed Patterns Obtained From Feo and Coo Bilayers Are Shown Inmentioning

confidence: 97%

Identification of the electronic structure differences between polar isostructural FeO and CoO films by core-level soft x-ray spectroscopy

et al. 2013

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The electronic properties of the FeO and CoO single layer thin films on Pt(111) were examined by core level soft X-ray spectroscopy. These oxygen terminated films are bilayer-thick and isostructural, Pt, Fe-Co, and O atoms stacked with small lateral shifts due to incommensurate relation with Pt(111). Probing occupied and unoccupied states projected on the oxygen atoms revealed states at the Fermi level suggesting orbital mixing with the metal substrate and also indicated an anisotropy in transition metal-oxygen bonding geometry. The differences in the core level spectral features were attributed to the substrate induced modification of the charge transfer energy and with an additional valence electron on Co.

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Calculations of electron inelastic mean free paths

Cited by 424 publications

References 31 publications

Quantitative ARXPS investigation of systems with ultrathin aluminium oxide layers

Quantitative ARXPS investigation of systems with ultrathin aluminium oxide layers

Quantification of discrete oxide and sulfur layers on sulfur‐passivated InAs by XPS

Identification of the electronic structure differences between polar isostructural FeO and CoO films by core-level soft x-ray spectroscopy

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