Calculations of the reflectance of porous silicon and other antireflection coating to silicon solar cells

Aroutiounian, V. M.; Maroutyan, K.R.; Zatikyan, A. L.; Touryan, K. J.

doi:10.1016/s0040-6090(01)01650-9

Cited by 26 publications

(16 citation statements)

References 16 publications

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“…In addition, the PS layer parameters depend on the properties of the silicon bulk material -its conductivity type, doping level, and orientation of crystals. Many various possibilities of PS applications generate high interest towards elaboration of new or modified on-line nondestructive methods for testing the micro structural characteristics of a surface [3,8,9]. To elaborate a technology which will make possible the fabrication of PS layers with various requirements to the parameters, a simple nondestructive method is needed for on-line assessment of abovementioned basic parameters.…”

Section: Introductionmentioning

confidence: 99%

Capacitance method for determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2007

Phys. Status Solidi (c)

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PACS 61.43. Gt, 77.22.Ch Microstructure and physical characteristics of porous silicon (PS), such as thickness, bulk porosity, dielectric permittivity, and refractive index depend directly on the production conditions, e.g., on the electrolyte composition, anodizing current density, duration of etching etc. Many various possibilities of applications of PS generate high interest towards elaboration of new or modified operative nondestructive methods for testing the microstructure characteristics of PS layer for the adjustment of its processing regimes. According to the mechanism of formation of porous silicon and experimental data on the morphology of PS layers, a porous layer represented as a structure with cylindrical pores of equal lengths piercing the silicon frame. This approximation allows considering the structure using the parallel plate model with in parallel connected capacitances of the silicon frame and the air or liquid dielectric filled pores. A method for obtaining information on the volume porosity, thickness, and dielectric permittivity of a PS layer by means of two measurements of the structure capacitance -in dry air and when the pores are filled by a condensed medium having a dielectric permittivity strongly differing from that of air (e.g., methanol) is described. Sufficiently good agreement has been revealed between the data calculated from the capacitance measurements and obtained by other methods.

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Section: Introductionmentioning

confidence: 99%

Capacitance method for determination of basic parameters of porous silicon

Adamyan¹,

Adamian²,

Aroutiounian³

2007

Phys. Status Solidi (c)

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“…For an optimal ARC layer, the optical thickness of the layer must be close to a quarter of the wavelength of incident light such as: 8 4 3 where d ARC is the thickness of the ARC layer and l min is the wavelength at which the reflectance becomes a minimum value. To obtain a minimum reflectance between 600 and 650 nm, the thickness of the ARC layer is required to be 77-83 nm.…”

Section: Resultsmentioning

confidence: 99%

Formation of a Porous Silicon Layer by Electrochemical Etching and Application to the Silicon Solar Cell

Kim

Moon

Lee

et al. 2007

J. Ceram. Soc. Japan

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SiN x thin film grown by plasma-enhanced chemical vapor deposition PECVD has conventionally been used as an antireflection layer of the silicon solar cell. In this work, a porous silicon PS layer formed by electrochemical etching was shaped on the surface of a crystalline silicon wafer for a simple alternative of anti-reflection coating ARC . The etching solution was prepared by mixing HF and ethanol for efficient bubble elimination on the silicon surface during the etching process. The anodization of the silicon surface was performed under a constant current, and the process parameters, such as current density and etching time including volume fraction of HF to ethanol in the solution, were carefully tuned to minimize the surface reflectance of the CZ silicon wafer with sheet resistance of 35-40 Q. The PS layer as an anti-reflection coating in the solar cell was compared with conventional PECVD SiN x thin film by measuring the surface reflectance of the cell. Also, Photovoltaic I-V properties and the quantum efficiencies of the cells with PS layers were measured.

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“…Thickness and porosity of a high-porosity PS layer and a low-porosity one are about 1.2μm and 80%, 1μm and 20%, respectively. According to related researches [4], the corresponding refractive index is about n 1 =1.5 and n 2 =3.0 for high-and low-porosity PS layers, respectively. To finish the sensor's structure of a Bragg reflector, inter-digitated aluminum electrodes were made on the front side to form Schottky contact by E-beam evaporation with a metal mask.…”

Section: Device Fabricationmentioning

confidence: 95%

Development of Bragg reflectors with multi-layered porous-silicon structures for optically chemical-sensing applications

2013

2013 International Symposium on Next-Generation Electronics

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Bragg reflectors with multi-layered porous silicon (MLPS) structures had been fabricated on Si substrates using an electrochemically modulation-etching technology. Analysis of reflectivity and photo-response spectra for the developed MLPS Bragg reflectors illustrated that the optical properties of these devices strongly depended on the refractive index of introduced chemical species. Experimental results showed MLPS Bragg reflectors are suitable candidates for development of optically multiparametric chemical-sensors.

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Calculations of the reflectance of porous silicon and other antireflection coating to silicon solar cells

Cited by 26 publications

References 16 publications

Capacitance method for determination of basic parameters of porous silicon

Capacitance method for determination of basic parameters of porous silicon

Formation of a Porous Silicon Layer by Electrochemical Etching and Application to the Silicon Solar Cell

Development of Bragg reflectors with multi-layered porous-silicon structures for optically chemical-sensing applications

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