Calibration‐Free and High‐Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots

Abstract

At the cutting‐edge of microwave detection technology, novel approaches which exploit the interaction between microwaves and quantum devices are rising. In this study, microwaves are efficiently detected exploiting the unique transport features of InAs/InP nanowire double quantum dot‐based devices, suitably configured to allow the precise and calibration‐free measurement of the local field. Prototypical nanoscale detectors are operated both at zero and finite source‐drain bias, addressing and rationalizing the microwave impact on the charge stability diagram. The detector performance is addressed by measuring its responsivity, quantum efficiency and noise equivalent power that, upon impedance matching optimization, are estimated to reach values up to ≈2000 A W−1, 0.04 and ≈10−16normalW/Hz${10^{ - 16}}{\rm{W}}/\sqrt {Hz} $, respectively. The interaction mechanism between the microwave field and the quantum confined energy levels of the double quantum dots is unveiled and it is shown that these semiconductor nanostructures allow the direct assessment of the local intensity of the microwave field without the need for any calibration tool. Thus, the reported nanoscale devices based on III‐V nanowire heterostructures represent a novel class of calibration‐free and highly sensitive probes of microwave radiation, with nanometer‐scale spatial resolution, that may foster the development of novel high‐performance microwave circuitries.

A Comprehensive Review and Analysis of Nanosensors for Structural Health Monitoring in Bridge Maintenance: Innovations, Challenges, and Future Perspectives

“…Electrical sensing in quantum dot-based sensors relies on the charge transport properties of the quantum dots [65]. By incorporating quantum dots into a conductive matrix or a field-effect transistor (FET) configuration, changes in charge carrier concentration or mobility can be detected.…”