Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs

Abstract

In the past few years, conventional digital IC technologies have developed rapidly and the device structures have shrunk down to the quasi-ballistic region which strongly affects the device characteristics. The usage of the steady-state transport model and the parameters of the drift-diffusion (DD) method may not correctly model the performance of these devices, including the velocity distributions of the carriers. Several previous studies have suggested modifying the transport parameters of the DD model to continue using it in the quasi-ballistic region. In this paper, a Monte Carlo (MC) simulator is used to calibrate the transport parameters of the DD model for silicon FinFETs. The device features obtained via the parameter-calibrated DD model fit well with the MC simulator. The trends of the calibration factors are also investigated for varying drain voltage, gate voltage, fin width and gate length.

Bias and geometry dependence of total-ionizing-dose effects in SOI FinFETs

“…In order to overcome the short channel effect (SCE) and mobility degradation of nanoscaled traditional planar MOSFETs, FinFETs have become the mainstream devices in IC industry from 22 nm technology nodes [1]. Due to their 3D structure, FinFET devices have advantages such as excellent gate control, suppressed SCE, good scalability compared to planar MOSFETs [2,3]. With the increasing performance requirements of ICs operating 3 Author to whom any correspondence should be addressed.…”

“…Due to their 3D structure, FinFET devices have advantages such as excellent gate control, suppressed SCE, good scalability compared to planar MOSFETs [2,3]. With the increasing performance requirements of ICs operating 3 Author to whom any correspondence should be addressed. in the cosmic environment, the radiation effect of FinFET devices arouses great interests [4][5][6][7][8][9][10][11].…”