SEMATECH has identified the need for a high resolution photomask pattern placement metrology tool to support SEMATECH member companies' photomask production as well as research and development work. Performance measures of the tool are driven by double exposure/double patterning approaches that will help extend 193nm lithography according to International Technology Roadmap for Semiconductors (ITRS) requirements. Based on its superior and extendable concept, PROVE TM , a new photomask registration and overlay metrology system from Carl Zeiss SMS, was chosen as the winning proposal for tool development by an evaluation team of mask makers and SEMATECH member companies. The scope of the PROVE TM project is to design and build a photomask pattern placement metrology tool to serve the 32 nm node and below. The tool is designed for 193 nm illumination and imaging optics, which enable at-wavelength metrology for current photomask needs. The optical beam path offers registration and critical dimension (CD) metrology using transmitted or reflected light. The short wavelength together with an NA of 0.6 also allows sufficient resolution even at working distances compatible with the use of pellicles, hence enabling the tool for qualification of final masks. The open concept together with the use of 193 nm wavelength enables a higher NA for pellicle-free applications, including extreme ultraviolet (EUV) masks. This paper reports the current status of PROVE TM , highlighting its resolution capabilities while measuring production features as well as key registration specifications.