Calixarene Electron Beam Resist for Nano-Lithography

Abstract

New electron beam (EB) resists made of calixarene resists are introduced. Typical sensitivities of calixarene resists range from 700 µ C/cm2 to 7 mC/cm2. High-density dot arrays with 15 nm diameter constructed using calixarene resist were easily delineated using a point EB lithography system. Our results suggest that the resolution limit of calixarene resists is dominated by a development process such as adhesion to a substrate rather than by the EB profile. Calixarene resists are resistant to etching by halide plasma. We also demonstrated nanoscale devices processed by using calixarene resists. Calixarene resists are promising materials for nanofabrication.

From Zeolite to Host-Guest Nanocomposite Materials

“…Such water soluble calixarenes display interesting biological properties such as antiviral and anti-bacterial activity [30]. It is found that calixarene derivatives as resist materials are used for electron-beam lithography [31,32].…”

Electron Beam Lithography for Fine Dot Arrays with Nanometer-Sized Dot and Pitch

“…We used the system under a probe current of 100 pA and an acceleration voltage of 30 kV. In the drawing, the address resolutions were 10 nm and 2.5 nm for ZEP520 and calixarene [14,15] resists, respectively. Development was carried out using the commercial developers ZED-N50 (MIBK+IPA) and ZEP-RD (xylene) for 210 sec and 180 sec for ZEP520 and calixarene, respectively.…”

Multicomponent negative-type photoresist based on Noria analog with 12 ethoxy groups

“…To overcome the trade-off relationships, molecular glasses have received much attention as a next-generation resist because of their small particle size and uniform molecular structure. 1-4 Fujita et al reported hexaacetate p-methylcalix [6]arena as the first negative-type molecular resist with B10 nm resolution by point irradiation of EB. [5][6][7] Ueda et al also reported a multicomponent, alkaline developable, negative-type photoresist composed of calixresorcin [4]arene, with 4,4¢-methylenebis[2,6-bis(hydroxymethyl)phenol] as a crosslinker and diphenyliodonium 9,10-dimethoxyanthracene-2-sulfonate as a photoacid generator (PAG), and they achieved a 150-nm resolution pattern.…”

“…1-4 Fujita et al reported hexaacetate p-methylcalix [6]arena as the first negative-type molecular resist with B10 nm resolution by point irradiation of EB. [5][6][7] Ueda et al also reported a multicomponent, alkaline developable, negative-type photoresist composed of calixresorcin [4]arene, with 4,4¢-methylenebis[2,6-bis(hydroxymethyl)phenol] as a crosslinker and diphenyliodonium 9,10-dimethoxyanthracene-2-sulfonate as a photoacid generator (PAG), and they achieved a 150-nm resolution pattern. 8,9 Thereafter, many negative-or positive-type molecular resist materials have been reported using various molecular glasses.…”