Camera on a chip

Ackland, B.; Dickinson, Alexander

doi:10.1109/isscc.1996.488499

Cited by 71 publications

(17 citation statements)

References 6 publications

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“…The most common CMOS pixel sensor is the active pixel sensor (APS) [6,[13][14][15][16][17][18][19][20][21][22][23][24][25] which has 2 conventional types, namely 3T APS [6,14,18,[21][22][23][24] and 4T APS [13][14][15][16][17][18][19][20]25], as shown in Fig. 3.…”

Section: Active Pixel Sensor (Aps)mentioning

confidence: 99%

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A Zero Bias Pixel Sensor and its Zero-Bias Column Buffer-Direct-Injection Circuit

Suriyavejwongs¹,

Leelarasmee²,

Pora³

2017

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Abstract. Two pixel sensors, namely active pixel sensor (APS) and pseudo-active pixel sensor (PAPS), are reviewed to show that APS suffers from dark current while PAPS suffers from leakage current. Then a new pixel sensor called zero bias pixel sensor (ZBPS) in which only two MOS switches in addition to the photodiode are used, one for connecting the pixel's photodiode to a column bus and the other for bypassing it. A zero-bias column buffer-direct-injection (ZCBDI) circuit, which is similar to a regulated cascode amplifier, is used to control the voltage at column bus at zero. All ZBPS pixels are guaranteed to work at zero voltage at all times to eliminate the dark current as well as leakage current. A case of a 10µm x 10µm ZBPS pixel designed with standard 0.18µm CMOS process is studied through simulation. This pixel generates a photocurrent within a range from 1pA to 100nA. To handle a large variation of photocurrent while maintaining zero column voltage, the ZCBDI is designed using differential cascode, common source, and buffer stages and then compensated for 50 degree phase margin. Transient simulation shows that the pixel steady state response time is around 1.406ms, leading to at most 5.5 frames per second for an image of 128x128 ZBPS pixels. The fill factor of ZBPS for this case is around 59%.

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Section: Active Pixel Sensor (Aps)mentioning

confidence: 99%

“…In particular, 2 types of pixel structure are reviewed. They are active pixel sensor (APS) [6,[13][14][15][16][17][18][19][20][21][22][23][24][25] in Section 2 and pseudo-active pixel sensor (PAPS) [26,27] in Section 3. Then a new sensor called zero bias pixel sensor (ZBPS), that can eliminate dark current, is proposed in Section 4.…”

Section: Introductionmentioning

confidence: 99%

A Zero Bias Pixel Sensor and its Zero-Bias Column Buffer-Direct-Injection Circuit

Suriyavejwongs¹,

Leelarasmee²,

Pora³

2017

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“…Avalanche photodiode gives high sensitivity but at the cost of increased noise [18]. Thus CMOS image sensors have attracted much attention due to their advantages of low power consumption, random sensor access, and design flexibility [19][20][21]. MOSFET is better than MESFET in terms of integration techniques.…”

Section: Introductionmentioning

confidence: 99%

Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor

Gautam¹,

Saxena²,

Gupta

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, a high-sensitivity low power photodetector using double gate (DG) MOSFET is proposed for the first time using change in subthreshold current under illumination as the sensitivity parameter. An analytical model for optically controlled double gate (DG) MOSFET under illumination is developed to demonstrate that it can be used as high sensitivity photodetector and simulation results are used to validate the analytical results. Sensitivity of the device is compared with conventional bulk MOSFET and results show that DG MOSFET has higher sensitivity over bulk MOSFET due to much lower dark current obtained in DG MOSFET because of its effective gate control. Impact of the silicon film thickness and gate stack engineering is also studied on sensitivity.

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“…Such imaging sensors typically comprise of CCD (charge coupled device) or CMOS (complimentary metal oxide semiconductor) image sensors with associated switching elements, and address (scan) and read out (data) lines [1]. Both CCD and CMOS image sensors are used in silicon technology which is so matured that nowadays millions of pixels and surrounding circuitry can be fabricated.…”

Section: Introductionmentioning

confidence: 99%

High speed pin photodetector with ultra-wide spectral responses

et al. 2005

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We report the design and fabrication of a high speed surface illuminated pin photodetector with a wide spectral response. An InGaAs based detector was grown lattice matched to InP and the device was fabricated using a novel technique to facilitate the direct absorption of incoming photons in the InGaAs layer without being absorbed by any other wider bandgap material. The absorption of a wide spectrum of wavelengths was achieved by recess etching almost all of the InP contact layer above the InGaAs absorption layer of a pin photodiode subsequent to ohmic contacts formation. Theoretical simulation shows responsivities above 0.6 A/W between 900 and 1600 nm and a linear reduction to 0.3 A/W at 650 nm. This makes the detector operational in both visible and near-infrared spectrum. The responsivities are 0.50, 0.77, and 0.67 A/W for 840, 1310 and 1550 nm respectively. These values confirm the potential of the device to be effective in all of the optical fiber communication wavelengths. Our calculations also show that the device can operate above 10 GHz throughout the spectrum.

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Camera on a chip

Cited by 71 publications

References 6 publications

A Zero Bias Pixel Sensor and its Zero-Bias Column Buffer-Direct-Injection Circuit

A Zero Bias Pixel Sensor and its Zero-Bias Column Buffer-Direct-Injection Circuit

Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor

High speed pin photodetector with ultra-wide spectral responses

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