Camphor sulphonic acid doped novel polycarbazole-g-C3N4 as an efficient electrode material for supercapacitor

Praveena, P.; Mathew, Sheril Ann; Dhanavel, S.; Kalpana, D.; Maiyalagan, T.; Narayanan, Vijaykrishnan

doi:10.1007/s10854-019-01198-z

Cited by 24 publications

(13 citation statements)

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“…Additionally, g-C 3 N 4 was embedded onto conductive polymers as an efficient electrode material for supercapacitors to improve electrochemical and mechanical stability. [144][145][146] Yang and coworkers prepared a novel electrode material for supercapacitors composed of poly(3,4-ethylenedioxythiophene) (PEDOT):poly(styrenesulfonate) (PSS) and g-C 3 N 4 by the layer-by-layer assembly method. 147 Compared with pure PEDOT, the PEDOT/g-C 3 N 4 composite demonstrated excellent electrochemical stability in neutral electrolyte and enhanced electrochemical performance of capacitance of 137 F g À1 in H 2 SO 4 and 200 F g À1 in Na 2 SO 4 , respectively.…”

Section: Blendingmentioning

confidence: 99%

Graphitic carbon nitride and polymers: a mutual combination for advanced properties

et al. 2020

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Section: Blendingmentioning

confidence: 99%

Graphitic carbon nitride and polymers: a mutual combination for advanced properties

et al. 2020

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“…46 The presence of absorbance bands at 1458 cm −1 was due to the ring structure of carbazole moiety. 47 The small bands between 750 and 875 cm −1 might be attributed to the tri-substituted benzene ring formation, 39 whereas the bands at 744, 1340, 2981, and 3402 cm −1 are due to >C−H 2 rocking vibrations from tail additions, −CH out-of-plane bending vibrations of the benzene ring, heteroaromatic −NH stretching vibrations, and heterocyclic γ-OH bands from water nitrogen. 46 PVDF nanofiber membranes exhibited typical absorbance bands at 839, 876, 1073, 1172, 1276, and 1402 cm −1 .…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Flexible Nanogenerator from Electrospun PVDF–Polycarbazole Nanofiber Membranes for Human Motion Energy-Harvesting Device Applications

Sengupta

Das

Dasgupta

et al. 2021

ACS Biomater. Sci. Eng.

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Poly(vinylidene difluoride) (PVDF) has become the polymer matrix of choice for fabrication of wearable electronics and physiological monitoring devices. Despite possessing a high piezoelectric constant, additives are required to increase the charge transfer from PVDF matrix to connected signal readout units. Many of these additives also stabilize the β-phase of PVDF, which is associated with highest piezoelectric coefficients. However, most of the additives used are often brittle ceramic-phase materials resulting in decreased flexibility of the devices and offsetting the gain in β-phase content. Intrinsically conducting polymers (ICP), on the other hand, are ideal candidates to improve the device-related properties of PVDF, due to their higher flexibility than ceramic fillers as well as ability to form conducting network in PVDF membranes. This work reports the performance and device feasibility of PVDF–polycarbazole (PCZ) electrospun nanofiber membranes. A higher β-phase was observed by FTIR spectroscopy in PVDF/PCZ compared to other PVDF phases. Moreover, a higher open-circuit potential was recorded over PVDF/polyaniline composites, which were studied for comparison. The addition of PCZ reduced the flexibility of pure PVDF nanofibers by 20% only. Besides, the work investigated the bacterial biofouling and cell compatibility of the matrix, as essential properties to examine any putative medical device application. PVDF/PCZ membranes were then used to develop a nanogenerator, which was capable of instantly lighting an entire LED array employing the rectified output power, and charged up a 2.2 μF capacitors using a bridge rectifier through a vertical compressive force applied periodically. Finally, the nanogenerator demonstrated electrical energy harvesting from movements of various parts of the human body, such as toe and heel movement and wrist bending. In conclusion, PCZ can be considered as an attractive, biocompatible, and anti-biofouling conducting polymer for electrical actuation and flexible electronic device applications.

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“…to passivation of SiNW surface with other materials such as carbon, NiO, SiC, and TiO 2 . [233][234][235][236][237][238] Of course, porosified SiNW combined with proper carbon shell has led to enormous capacitance of ≈325 mF cm −2 . [239]…”

Section: Energy Storagementioning

confidence: 99%

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Srivastava

Khang

2021

Advanced Materials

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classified into two common approaches: bottom-up chemical synthesis, such as vapor-liquid-solid growth, [16][17][18][19][20] and topdown fabrication schemes. [21][22][23] This review will focus on the top-down fabrication of Si structures using a wet chemical etching technique aided with a metal catalyst, called metal-assisted chemical etching (MaCE). [24][25][26][27][28][29][30][31][32] In comparison with top down fabrication methods based on dry etching using a reactive plasma in vacuum, MaCE is less expensive and less complex. [33][34][35] MaCE is a nano-scale reductionoxidation (redox) process that usually occurs in aqueous solution where the sample to be etched is in contact with the etchant. MaCE is a simple, cost-effective, and versatile method to produce Si nanostructures; due to these attractive features, there have been many good review articles published on the process. [36][37][38][39][40][41][42] With two-decades of research of the MaCE and its innovative variations, recent studies have focused on the various applications of Si nanostructures prepared by MaCE, including photovoltaics, [43,44] thermoelectrics and piezoelectric nanogenerators, [45] energy storage, [46][47][48] nanophotonics and optoelectronics, [49] and biosensors and biomedical applications. [50][51][52] In this review, we provide an overview of the recent advances in MaCE processes and their novel applications. To differentiate this review from previous review articles, the main emphasis is on the recently developed novel MaCE processes and the macroscale structuring of Si by MaCE. We begin the review by describing new MaCE processes, particularly catalysts for MaCE. In contrast to well-known noble metal catalysts, such as Ag, Au, and Pt, carbon-based catalysts, such as graphene, graphene oxide, and carbon nanotubes, have been successfully applied as catalysts for MaCE. In addition, TiN has been found to be a catalyst for MaCE, making the whole process CMOS-compatible. Different types of etch additives, such as various alcohols and chlorides, have also been discussed, which enhance etch uniformity by increasing the wettability of etchants and suppressing the random diffusion of excessive (holes) h + by trapping them for better etch control. Recent novel variations of the MaCE process have been introduced, such as MaCE with externally applied electric or magnetic fields. The external field has a profound effect on the output of MaCE, by controlling the etch directionality and etch rate. In addition, MaCE can be combined with unconventional patterning techniques, StructuringSi, ranging from nanoscale to macroscale feature dimensions, is essential for many applications. Metal-assisted chemical etching (MaCE) has been developed as a simple, low-cost, and scalable method to produce structures across widely different dimensions. The process involves various parameters, such as catalyst, substrate doping type and level, crystallography, etchant formulation, and etch additives. Careful optimization of these parameters is the key to the succe...

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Camphor sulphonic acid doped novel polycarbazole-g-C3N4 as an efficient electrode material for supercapacitor

Cited by 24 publications

References 68 publications

Graphitic carbon nitride and polymers: a mutual combination for advanced properties

Graphitic carbon nitride and polymers: a mutual combination for advanced properties

Flexible Nanogenerator from Electrospun PVDF–Polycarbazole Nanofiber Membranes for Human Motion Energy-Harvesting Device Applications

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

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