Can enhancement in tunnelling width influence the final spintronic feature of two-dimensional nanostructure of graphitic carbon nitride-(graphene)- graphitic carbon nitride?

Abstract

Herein we present a theoretical foray on crucial role played by the graphitic tunnelling barrier in tuning spintronic feature of two-dimensional insulating graphene layer sandwiched between two ferromagnetic graphitic carbon nitride (g- C4N3) electrodes. We mainly focused on the tuning of spin filter efficiency due to the alteration in tunnelling width. 100% spin filter efficiency reported at each tunnelling width. High degree of spin filter efficiency is restored even at finite bias over a wide range of bias range -1.0 V to +1.0 V. Entire observation have been explained by analysing transmission spectrum at zero bias and a molecular level origin of the observed spintronic response of the device have been provided by analysing the Molecular Projected Self-Consistent Hamiltonian states (MPSH) and transmission pathways of the system.

Role of dopants in tuning spintronic features of lithium doped g-C4N3@Lin =1 to 4

“…However, in this context graphitic carbon nitride (g-C4N3) is found to be an ideal material to study as it possesses both the characters of metal-free magnetism and half metallicity in spite of being free from any 3d transitional metal elements [12,13]. It is well known that generally 2p electronic systems exhibits non-magnetic character in bulk systems but in case of ultrathin two dimensional structure like g-C4N3 the 2p electrons behave in a very peculiar way to manifest magnetic behaviour associated with half metallicity; which certainly makes it useful as a probable spintronic material [14][15][16][17][18][19][20][21]. In this context, it is worth noting that electronic structure property of g-C4N3 could be suitably tuned in presence of metallic dopants like Li atom.…”