Can Homojunction Tunnel FETs Scale Below 10 nm?

Ilatikhameneh, Hesameddin; Klimeck, Gerhard; Rahman, Rajib

doi:10.1109/led.2015.2501820

Cited by 34 publications

(24 citation statements)

References 43 publications

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“…Two major candidates for channel material in the next generation devices are III-V [27] and 2D Van der Waals materials [28]- [30]. InAs and phosphorene have been chosen as channel materials in this work due to their promising characteristics; InAs has a high mobility and geometric confinement increases the bandgap of InAs to a desirable range (above 0.7eV) [31]. Phosphorene has anisotropic effective mass and a necessary bandgap for TFET applications [32]- [36].…”

Section: Atomistic Quantum Transport Simulationsmentioning

confidence: 99%

Sensitivity Challenge of Steep Transistors

Ilatikhameneh

Ameen

Chen

et al. 2018

IEEE Trans. Electron Devices

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Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of these devices in integrated circuits. From a sensitivity perspective, an ideal switch should have a high sensitivity to the gate voltage and lower sensitivity to the device design parameters like oxide and body thicknesses. In this work, conventional tunnel-FET (TFET) and negative capacitance FET are shown to suffer from high sensitivity to device design parameters using full-band atomistic quantum transport simulations and analytical analysis. Although Dielectric Engineered (DE-) TFETs based on 2D materials show smaller sensitivity compared with the conventional TFETs, they have leakage issue. To mitigate this challenge, a novel DE-TFET design has been proposed and studied.

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Section: Atomistic Quantum Transport Simulationsmentioning

confidence: 99%

Sensitivity Challenge of Steep Transistors

Ilatikhameneh

Ameen

Chen

et al. 2018

IEEE Trans. Electron Devices

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“…Si yields the highest number of hits, with the other material lagging behind. T-FETs can be fabricated as a homogeneous material [24], but it is more common to use an alternate material in the source, typically with a smaller bandgap to promote tunneling, and hence many T-FETs are heterogeneous in material design [25].…”

Section: Growing Popularity and Comparison With Other Devicesmentioning

confidence: 99%

(Invited) The (R)Evolution of the Junctionless Transistor

Duffy

2016

ECS Trans.

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In the junctionless transistor the doping type and concentration in the channel region is essentially equal to that in the source and drain, or at least to that in the source and drain extensions. This paper will first focus on the Revolution of the junctionless transistor, concentrating on the initial reports and studies in 2009. Then the Evolution of the junctionless transistor will be discussed since those early reports in 2009. A variety of studies will be reviewed, as junctionless transistors are being reported in many more materials other than Si, such as in Ge and InGaAs, and very recently in MoS2 and in other transition-metal-dichalcogenide semiconductors.

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“…Heterostructure channels improve the performance of TFETs by using small Eg as source, Si as channel material to improve I ON while keeping I OF F small. Unfortunately, the large lattice mismatch [11,12] and interface states [13][14][15] between the materials prevent the formation of an ideal heterojunction. Artifical heterojunctions based on a single channel material have been achieved in graphene by varying the width of graphene nanoribbon (GNR) [16].…”

Section: Introductionmentioning

confidence: 99%

“…TE-TFET can be applied to any material that has a band gap dependence on layer thickness. In this work, phosphorene is chosen as the channel material due to the fact that multi-layer phosphorene is direct gap material [28,29] and its bandgap range includes the optimum bandgap of 1.2 qV dd for TFET applications [30][31][32]. Although, the bandgap of TMD flakes depends on the flake thickness, only monolayer TMDs are direct gap materials.…”

Section: Introductionmentioning

confidence: 99%

Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene

Chen

Ilatikhameneh

Ameen

et al. 2017

IEEE Electron Device Lett.

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Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgaps (Eg). Unlike the conventional hetero-junction TFETs, TE-TFET uses spatially varying layer thickness to form a hetero-junction. This offers advantages by avoiding the lattice mismatch problems at the interface. Furthermore, it boosts the ON-current to 1280µA/µm with 15nm channel length. Providing higher ON currents, phosphorene TE-TFET outperforms the homojunction phosphorene and the TMD TFETs in terms of extrinsic energydelay product. TE-TFET also scales well to 9nm with constant field scaling E = VDD/L ch = 33mV /nm. In this work, the operation principles of TE-TFET and its performance sensitivity to the design parameters are investigated through full-band atomistic quantum transport simulations.

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Can Homojunction Tunnel FETs Scale Below 10 nm?

Cited by 34 publications

References 43 publications

Sensitivity Challenge of Steep Transistors

Sensitivity Challenge of Steep Transistors

(Invited) The (R)Evolution of the Junctionless Transistor

Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene

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