Cantilever Type Lead Zirconate Titanate Microactuator Utilizing Ruthenium Oxide

Abstract

A new and simple cantilever type Pb(Zr, Ti)O3 [PZT] microactuator was fabricated by adopting RuO2. The RuO2 has reasonably good conductivity and stiffness and it can replace the double layer of electrode and supporting layer to a single layer in a cantilever beam. The RuO2, PZT and Al thin films were deposited on the Si substrate. The patterning of the Al was carried out by a lithography process and etched with a chemical wet etchant. The etching of PZT and RuO2 were performed by a reactive ion etching system. The Si was etched isotropically to form a cantilever beam. The fabricated cantilever beam consists of Al, PZT and RuO2, and the thicknesses of the films are 0.40, 0.25 and 0.70 µm, respectively. The beams were from 140 µm to 275 µm in length and all of them were 60 µm wide. Driving tilt angles of the cantilever beams were almost proportional to the applied voltages.

Hot aluminum substrate induced hexagonal‐tetragonal phase transitions in InSe and performance of Al/InSe/Cu2O pn tunneling devices

“…The high stress leads to atomic displacements which may be a reason for the induced crystallization of tetragonal phase. 19 It is also reported that hot sapphire substrate induces a metastable hexagonal WO 3 phase and leads to more stabilized structure. 20 The tetragonal phase of indium selenide is rarely observed in literature.…”

“…It is mentioned that hot Al 2 O 3 substrates induces high stress due to the difference of the thermal expansion coefficient between various films. The high stress leads to atomic displacements which may be a reason for the induced crystallization of tetragonal phase 19 . It is also reported that hot sapphire substrate induces a metastable hexagonal WO 3 phase and leads to more stabilized structure 20 …”

Combinatorial study of the phase development of sputtered Pb(Zr,Ti)O3 films

“…The development of the fabrication technology for piezoelectric films has led to various piezoelectric MEMS devices including gyro sensors and the inkjet print head. [1][2][3][4][5] As the piezoelectric effect features high energy density, high sensitivities, and low power consumption, piezoelectric MEMS has seen a variety of applications. Pb(Zr,Ti)O 3 (PZT) is widely used in the MEMS devices.…”

Low-temperature preparation of sputter-deposited Pb(Zr0.52Ti0.48)O3 thin films through high oxygen-pressure annealing

“…Ferroelectric lead zirconate Pb(Zr x Ti 1Àx )O 3 (PZT) thin films with a perovskite crystal structure have attracted considerable attention on account of their potential and practical applications in various functional devices, such as the nonvolatile memory components, thermal imaging arrays, microactuators, microelectromechanical systems (MEMS), electro-optic devices for data storage and displays, wave guides, high-dielectric constant capacitors, and micromotors [1][2][3][4][5][6][7][8][9][10][11].…”