Capacitance changes in neutron irradiated n-type silicon: The flux effect

Novoselnik, Branimir; Pilipovic, Marko; Jačimović, Radojko; Pivac, Branko; Slunjski, Robert; Capan, Ivana

doi:10.1016/j.nimb.2010.04.017

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…The Schottky contacts were formed by the thermal evaporation of gold, while the Ohmic contacts were formed by the thermal evaporation of aluminium on the back side of silicon wafer. Details are given elsewhere [16]. The quality of the prepared diodes was characterized by I-V and 1 MHz C-V measurements at different temperatures (77-300 K).…”

Section: Methodsmentioning

confidence: 99%

Vacancy-related defects in n -type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range

Capan

Pastuović

Siegele

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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Deep level transient spectroscopy (DLTS) has been used to study vacancy-related defects formed in bulk n-type Czochralski-grown silicon after implantation of accelerated heavy ions: 6.5 MeV O, 10.5 MeV Si, 10.5 MeV Ge, and 11 MeV Er in the single ion regime with fluences from 10 9 cm 2 to 10 10 cm 2 and a direct comparison made with defects formed in the same material irradiated with 0.7 MeV fast neutron fluences up to 10 12 cm 2. A scanning ion microprobe was used as the ion implantation tool of n-Cz:Si samples prepared as Schottky diodes, while the ion beam induced current (IBIC) technique was utilized for direct ion counting. The single acceptor state of the divacancy V2(/0) is the most prominent defect state observed in DLTS spectra of n-CZ:Si samples implanted by selected ions and the sample irradiated by neutrons. The complete suppression of the DLTS signal related to the double acceptor state of divacancy, V2(=/) has been observed in all samples irradiated by ions and neutrons. Moreover, the DLTS peak associated with formation of the vacancy-oxygen complex VO in the neutron irradiated sample was also completely suppressed in DLTS spectra of samples implanted with the raster scanned ion microbeam. The reason for such behaviour is twofold, (i) the local depletion of the carrier concentration in the highly disordered regions, and (ii) the effect of the microprobe-assisted single ion implantation. The activation energy for electron emission for states assigned to the V2(/0) defect formed in samples implanted by single ions follows the Meyer-Neldel rule. An increase of the activation energy is strongly correlated with increasing ion mass.

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Section: Methodsmentioning

confidence: 99%

Vacancy-related defects in n -type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range

Capan

Pastuović

Siegele

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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“…the excellent radiation hardness of 4H-SiC material. The significant decrease in the free carrier concentration is accompanied with the increase in the concentration of the Z 1 (=/0) and Z 2 (=/0) concentrations for fluence levels higher than 10 12 n/cm 2 .The decrease in the free carrier concertation n as a function of the neutron fluence Φ is well described by a linear equation [33]:…”

Section: Resultsmentioning

confidence: 90%

Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC

Brodar

Capan

Radulović

et al. 2018

Nuclear Instruments and Methods in Physics Research Section B:

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This paper presents the characterization of the electrically active defects created by epithermal and fast neutrons in epitaxial n-type 4H-SiC material using Laplace Deep Level Transient Spectroscopy (Laplace DLTS). While the deep level related to the carbon vacancy has been observed in as-grown material, we observed that epithermal and fast neutron irradiation introduces additional simple defect complexes, with energy levels at E C-0.40 eV and E C-0.70 eV.

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The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes

Aldemir

Kökçe

et al. 2018

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Capacitance changes in neutron irradiated n-type silicon: The flux effect

Cited by 3 publications

References 9 publications

Vacancy-related defects in n -type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range

Vacancy-related defects in n -type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range

Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC

The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes

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