Capacitance-Dependent V<sub>TH</sub> Instability Under a High dV<sub>g</sub>/dt Event in p-GaN Power HEMTs

Tang, Shun-Wei; Lin, Wei-Syuan; Huang, Zhen-Hong; Wu, Tian-Li

doi:10.1109/led.2022.3202498

Cited by 6 publications

(6 citation statements)

References 11 publications

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“…Firstly, the trapping mechanisms with a negative gate-source voltage applied on the depletion GaN HEMTs can be presented in Figure 1(a). It has been reported that the negative gate voltage applied on the GaN HEMTs can lead to the infection of electrons to the regions under the gate [5] , and the twodimensional electron gas (2-DEG) can be depleted below the gate. Besides, the GaN and AlGaN layers would be depleted to generate a screening charge as well, and the trapped charges are possibly located in the regions in Figure 1(a).…”

Section: Methodsmentioning

confidence: 99%

“…The traps located in the GaN buffer have been reported to be filled with electrons under a higher gate and drain-source bias conditions [7] . In addition, the activation energy of third trap DP3 was 0.067 eV with a large time constant, which may be located in the gate-drain access region [5] . The absolute amplitude of DP3 was relatively large as shown in Figure 3(d), which was also consistent with the reduction in g m in Figure 2(a).…”

Section: Identification Of the Activation Energysmentioning

confidence: 99%

“…The trapping behavior in the GaN HEMTs can be preliminarily analyzed by pulsed measurements at different quiescent bias voltages [3] . In this study, the period and width of the driving waveform was 50 ms and 500 µs, respectively [5] . Besides, the remarkable positive threshold voltage shift along with the reduction in g m was shown in Figure 2(a).…”

Section: Pulsed Measurementsmentioning

confidence: 99%

“…Therefore, the exact amplitudes should be extracted considering the points near the peaks in the TCS, and thus the DAS was used to present the extract contribution as shown in Figure 2(c). With this method, the points of peaks can be added up with a differential calculation, of which details about this method can be found in previous studies [5] . Figure 3(d) presented the detailed amplitudes of three traps, which were directly isolated from the difference corresponding to x-axis in Figure 3(c), and the amplitudes of were 10.53%, 4.77%, and 16.54%, respectively.…”

Section: Pulsed Measurementsmentioning

confidence: 99%

“…Firstly, the first trap DP1 with lower time constant was calculated with a level of 0.467 eV. The traps with a similar level can be associated with the trap under the gate [5] . Besides, Figure 3(d) presented the larger proportion of DP1 was large according to the results of DAS, and this sort of trap can be more significant in current collapse phenomonon.…”

Section: Identification Of the Activation Energysmentioning

confidence: 99%

See 4 more Smart Citations

Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage

Pan

Zhou

You

et al. 2023

J. Phys.: Conf. Ser.

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In this work, we presented a comprehensive investigation of the trapping effect in the GaN-based high-electron-mobility transistors (HEMTs) under the negative gate-source voltage condition. The trapping mechanisms in the OFF state were analyzed and the trapping behaviors were characterized using the pulsed measurements preliminarily. Specifically, the transient drain-source voltage curves under a certain filling condition were monitored to reflect the trapping effect in the OFF state. The spectra of time constant and differential amplitude were combined to obtain the information on traps. Three traps with activation energys of 0.467, 0.552, and 0.067 eV were characterized using the transient drain voltage curves under different temperatures. The trap characterization methods may be useful for the further study of the trapping behaviors and can be helpful for the improvement of the reliability of the devices.

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Section: Methodsmentioning

confidence: 99%

Section: Identification Of the Activation Energysmentioning

confidence: 99%

Section: Pulsed Measurementsmentioning

confidence: 99%

Section: Pulsed Measurementsmentioning

confidence: 99%

Section: Identification Of the Activation Energysmentioning

confidence: 99%

See 3 more Smart Citations

Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage

Pan

Zhou

You

et al. 2023

J. Phys.: Conf. Ser.

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Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors

Mao

2024

Physica Status Solidi (a)

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The transient heat conduction equation for the 2D electron gas layer in GaN high‐electron‐mobility transistors is developed. The Schottky barrier height and the conduction band offset seen by electrons in the 2D electron gas layer will be reduced due to self‐heating in the 2D electron gas of GaN high‐electron‐mobility transistors via quantum coupling. Such a reduction will lead to a shift in the threshold voltage. To address this issue, an analytical physical model of self‐heating in the 2D electron gas of a GaN high‐electron‐mobility transistor via quantum coupling impacts on its threshold voltage instability is proposed. The proposed model forecasts that the threshold voltage can have an exponentially dependent relation with the reciprocal of the recovery time after the stress voltage is released, as well as dependencies on the square of the drift velocity, the gate voltage, and the surrounding temperature. The experimentally observed threshold voltage shifts of GaN high‐electron‐mobility transistors confirm such dependent relationships predicted by the proposed physical model. This article provides evidence that the combination of self‐heating in the 2D electron gas layer and quantum coupling may be a possible physical origin of the threshold voltage instability in GaN high‐electron‐mobility transistors.

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Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

Chen,

He,

Shi

et al. 2024

Applied Physics Letters

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In this Letter, we investigate the threshold voltage (VTH) instability of Schottky p-GaN gate high electron mobility transistors (SP-HEMTs) under high-frequency operation by a resistive-load hard switching method. The abnormal VTH instability is observed, which is different between fully and partially depleted SP-HEMTs (FD- and PD-HEMTs). Notably, for FD-HEMT, VTH shifts positively with effective stress time. However, the VTH instability in PD-HEMT is more complex. At low VGS (e.g., 3 V) and high VGS (e.g., 6 V), VTH shifts positively with stress time consistently. Nevertheless, at intermediate VGS levels (e.g., 4 and 5 V), VTH initially shifts positively and then negatively, displaying a non-monotonous variation. Furthermore, the frequency dependence of VTH is contingent upon VGS. At low VGS, VTH exhibits a negative shift with the increase in frequency. This trend inverses when VGS exceeds 4 V. And it should be noted that the extracted VTH under high-frequency operation is lower than their quasi-static values for both transistor types. This work depicts the physical process and mechanism of the abnormal VTH instability; different from the quasi-static case, hole accumulation effects will be enhanced due to the high dV/dt, which results in a lower VTH. The distinct VTH behaviors of FD- and PD-HEMTs are closely related to the trapping effects, as well as hole accumulation and insufficiency, within the two different p-GaN gate layers.

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Capacitance-Dependent V_TH Instability Under a High dV_g/dt Event in p-GaN Power HEMTs

Cited by 6 publications

References 11 publications

Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage

Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage

Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors

Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

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Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs

Cited by 6 publications

References 11 publications

Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage

Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage

Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors

Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation

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Capacitance-Dependent V_TH Instability Under a High dV_g/dt Event in p-GaN Power HEMTs