Capacitance performance of NiO thin films synthesized by direct and pulse potentiostatic methods

Abstract

Transition metal oxides have applications into energy storage devices such as electrochemical supercapacitors. We deposited nickel oxide (NiO) thin films using electrodeposition under direct and pulse potentiometry. Effects of the pulse electrodeposition conditions are systematically investigated. Results show that the pulse time clearly influences the morphology of the deposited thin films. The nanostructured thin film that was deposited under 1 sec on-time condition proved to be a suitable electrode material since its 1000 Fg -1 at 0.5 Ag -1 specific capacitance is large enough to fulfil the needed requirement. In addition, the thin film at hand shows 90.1% capacity retention during 800 galvanostatic charge-discharge cycles under 5 Ag −1 current density. Moreover, nanostructured NiO films prepared by pulse electrodeposition demonstrate high power performance, excellent rate as well as long term cycling stability, which make them promising electrode materials for supercapacitor applications.

Pulsed Reverse Potential Electrodeposition of Carbon-Free Ni/NiO Nanocomposite Thin Film Electrode for Energy Storage Supercapacitor Electrodes

“…Similar small size NiO crystallites of 5.6 nm have been reported by Atalay et al on NiO nanostructures deposited by chemical precipitation onto fungi substrates [8]. The distribution of the small nanosize crystallites of Ni and NiO in the composite thin film can contribute to the large specific surface area [9].…”

Impurity Defect Induced Ferromagnetism Investigation of SiO2-Supported NiO Particles

“…The broad peak at about 3360 cm -1 and the sharp peak 1550 cm -1 in all samples can be attributed to the O-H stretching vibration mode and H-O-H bending vibration mode, respectively. H-O-H bending vibration peak intensities much more sharper in NS1 samples due to the increasing presence of traces of water [26]. The weak peak in the wavenumber region of 500 ∼ 750 cm -1 is observed due to the combination Ni-O and Si-O bonds, indicating a cross network is formed in all samples [27].…”

Nickel Oxide Films Deposited by Sol-Gel Method: Effect of Annealing Temperature on Structural, Optical, and Electrical Properties

“…This line suggests that adsorbed water is still present after annealing above 300 °C. The characteristic peaks of nanocrystalline NiO [ 34 ] are expressed at 445–540 cm −1 , for all annealed films with the exception of NiO x , treated at 200 °C. The strong lines at 390–405 cm −1 (for films, treated at 300–500 °C) are assigned to transverse optical phonon frequency [ 35 , 36 ], observed in bulk NiO.…”