Capacitance–voltage and conductance–voltage characteristics of Ag/n-CdO/p-Si MIS structure prepared by sol–gel method

Cu2ZnSnS4:graphene oxide nanocomposites based photoresponse devices

“…The presence of this peak is due to the charge transport in depletion region. The density of interface states can be determined by the following equation [43],…”

A novel type heterojunction photodiodes formed junctions of Au/LiZnSnO and LiZnSnO/p-Si in series

“…It is seen that the series resistance decreases with the increasing frequency. This frequency dependence of R s is the result of frequency-dependent charges such as interface charge, fixed oxide charge, oxide-trapped charge and mobile oxide charge [52][53][54][55][56]. Moreover, the R s -V plots give a peak at about -1 V for 0 and 1at.% Li and the peak intensity is decreased with the increasing frequency.…”

Annealing effects on electrical and optical properties of a-Si:H layer deposited by PECVD

“…Such behavior indicates that various kinds of interface traps are present. While the interface states at lower frequencies can follow the alternating current (AC) signals, they cannot follow AC signals at higher frequencies [27].…”