Capacitance-Voltage Characteristics of a Quantum Well within a Schottky Layer

Kreher, K.

doi:10.1002/pssa.2211350226

Cited by 22 publications

(9 citation statements)

References 5 publications

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“…3͒ for a structure with xϭ0.5 and d QW ϭ2 nm reveals a plateau of nearly constant capacitance C*. The plateau between the first and second critical biases U R1 and U R2 is related to the hole concentration in the QW by n w ϭC*(U R2 ϪU R1 )/Ae, 13 where A is the diode area and e is the elementary charge. Estimated n w values for the used structures and the corresponding temperatures are given in Table II.…”

Section: A Capacitance Voltage and Admittance Spectroscopy Measurementsmentioning

confidence: 98%

Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content

Schmalz

et al. 1996

Phys. Rev. B

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We present a detailed theoretical and experimental study of hole emission processes in p-type Si/SiGe/Si structures under the nonequilibrium conditions found in deep-level transient spectroscopy ͑DLTS͒ investigations. We clarify the possibilities and limitations of DLTS applied to quantum-well ͑QW͒ structures. We report an observation of the effect of thermally activated tunneling induced by local high electric field on the emission rate of confined holes. In the limit of high external electric field F, the hole emission rate e T increases with F according to e T ϭe T ͑0͒exp(F 2 /F c 2 ), where the characteristic field F c agrees with theoretical calculations. The effect of nonequilibrium carrier diffusion is determined from the dependence of the DLTS signal on the pulse frequency, allowing one to estimate the effective hole diffusion coefficient. Interface roughness scattering, which controls the carrier mobility in the narrow QW, is investigated. The observed diffusion coefficient depends only slightly on the width for the investigated narrow SiGe QW's ͑2-3 nm͒, but depends strongly on the Ge content ͑xϭ0.3-0.5͒ in agreement with theory. A strong increase of the hole emission activation energy with decreasing nonequilibrium hole concentration gives evidence for considerable fluctuations of lateral potential, inducing lateral localization of confined holes at low temperatures. We show that interface roughness is responsible for these lateral potential fluctuations. ͓S0163-1829͑96͒08248-3͔

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Section: A Capacitance Voltage and Admittance Spectroscopy Measurementsmentioning

confidence: 98%

Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content

Schmalz

et al. 1996

Phys. Rev. B

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“…The voltage ranges of these plateaus are longer for structures with C 60 -DT. Such plateau in high-frequency C-V dependencies is an evidence of the capture/escape of current carriers in a quantum well [11] or quantum dots [12]. Perhaps, in our case these ones may be the centers of capture caused by oxygen in C 60 .…”

Section: Resultsmentioning

confidence: 93%

Electrical properties of Au/C<inf>60</inf>/n-Si photodiode structures with pristine and dithioloctane-functionalized C<inf>60</inf> nanolayers

Dmitruk

Borkovskaya

Naumenko

et al. 2010

2010 27th International Conference on Microelectronics Proceedings

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The dithioloctane-treatment of C 60 film was shown to ensure the deposition on it of gold nanoparticles with the controlled size and shape leading to enhancement of the Au/C 60 /n-Si structure photocurrent due to the excitation of local plasmons in metal nanoparticles. In this work the detailed investigation of the electrical properties of these structures with the pristine and dithioloctane-treated C 60 interlayers was made. The current-voltage and capacitance-voltage dependencies were measured in the temperature range from 80 to 320 K. The mechanisms of the current flow and their parameters were determined. It was shown, that the used of dithioloctane-treatment of C 60 layer did not change the mechanisms of the in current flow in Au/C 60 /n-Si structure, specifically, in a decrease of the series resistance, determined by C 60 layer, and in a decrease of the effective height of barrier for the reverse current flow.

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“…This is why a plateau and the hysteresis could be observed in the C-V properties. The plateau effect in the high-frequency C-V characteristics was also studied by K. Kreher 24 and our previous work 15 in InP/Ga 0.47 In 0.53 /InP and Al/polymer-Fe 2 O 3 -polymer/n-Si structures respectively, which can be used to detect the presence or absence of the charges stored in the insulator layer of the MIS structure. 25 After the applied bias at V m2 , the electrons from the metal surface penetrate the insulator layer to the silicon surface directly and the hole generation is again controlled by the applied bias.…”

Section: Figurementioning

confidence: 96%

Study of the dielectric constant of polyurethane/polybutyl-methacrylate interpenetrating polymer networks using metal-insulator-semiconductor structure

Qian¹,

Qin²,

Wang³

et al. 2000

J. Appl. Polym. Sci.

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Polyurethane/polybutyl-methacrylate interpenetrating polymer networks (IPNs) film was formed on n-Si substrate by the dropping technique. When aluminum (Al) was vacuum deposited on the top of the film, the Al/IPNs/n-Si (metal-insulatorsemiconductor) structure was fabricated successfully. With the aid of the high-frequency capacitance-voltage (C-V) characteristics at room temperature, the dielectric constant of IPNs was obtained. In the C-V curves, an increased hysteresis at high sweep voltage and a plateau in the depletion region were observed. This plateau indicates that the unsaturated bonds beyond IPNs film could act as electron well at the applied voltage above 10 V.

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Capacitance-Voltage Characteristics of a Quantum Well within a Schottky Layer

Cited by 22 publications

References 5 publications

Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content

Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content

Electrical properties of Au/C<inf>60</inf>/n-Si photodiode structures with pristine and dithioloctane-functionalized C<inf>60</inf> nanolayers

Study of the dielectric constant of polyurethane/polybutyl-methacrylate interpenetrating polymer networks using metal-insulator-semiconductor structure

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