Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grown in situ CdTe

Voitsekhovskii, Aleksander V.; Nesmelov, S. N.; Dzyadukh, S. М.; Варавин, В. С.; Dvoretskii, S. A.; Михайлов, Н. Н.; Sidorov, Yu. G.; Yakushev, M. V.

doi:10.2478/s11772-010-0024-9

Opto-Electron. Rev.

2010

DOI: 10.2478/s11772-010-0024-9

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Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grown in situ CdTe

Aleksander V. Voitsekhovskii

S. N. Nesmelov

S. М. Dzyadukh

et al.

Abstract: The electrical properties of the interface between Hg 1-x Cd x

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Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE Hg1−xCdxTe at passivation by epitaxially grown in situ CdTe

Abstract: The electrical properties of the interface between Hg 1-x Cd x

Cited by 0 publications

References 3 publications

No citations

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